2SK1087-MR FUJI
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2SK1087-MR FUJI POWER MOS-FET N-C 4ANNEL SILICON POWER MOS-FET F lll Ss E R | ES Outline Drawings Features 9S a0 * asio2 @High current Pr oye five © Low on-resistance my yy cr ®No secondary breakdown BAe | 3 @Lcw driving power a 4 al ai , @Hijh forward Transconductance | lows + om , J sero2 i Applications e082 i 5 sow ®@ Motor controllers | | Bt © General purpose power amplifier | | IL or02 Ayes e © D-DC converters zausoz | ff zsuo2 LJ ence JEDEC — BIAS SC-67 MMax. Ratings and Characteristics Equivalent Circuit Schematic @AL solute Maximum Ratings(Tc=25°C) Items. Units _ ~_Dain-source voltage Voss | 100 | ~ Continuous drain current b 12 A __P ilsed drain current [Toous | 48] A _ Drain(D) ___ Continuous reverse drain current | Inox | A __ — G ite-source peak voltage Voss £20 Vv - Vax. power dissipation P| 3s | Ww cote(c) Oberating and storage To 150 | C temperature range Tete =55~ +150] °C Source(S) @Elcctrical Characteristics(Tc= 25°C) eer 7 Items [ Symbols | _Test Conditions | Min. [ Typ. | Max. | Units Erain-source breakdown voltage| Vinwoss | b=ImA Vas=0V 0 ee Cate threshold voltage | Vosum In=lmA_Vos=Ves 1.0 15 | 25 | Vv , a Vos=100V Tn=25C | 10 | 500 vA Z2ro gate voltage drain current Iss Vos=0V Tn=125°C | [02 10 mA Cate-source leakage current | Icss | -Vos=*20V__Vos=0V. [| 10 Joo | pA - = Ip=6A_Vos=4V. [| ona] 0.24) 0 __Ttainsource on-state resistance Rosiom p=6A Ves=l0V Od || Forward transconductance | gis Ip=6A_Vps=25V 10 S ___Tiput capacitance Cus | Vos =25V [| 950 | 1430 ___Cutput capacitance Goss | Vos =0V [| 200 | 300 pF ___Feverse transfer capacitance | Crs f =1MHz [| 60 9 | Vurn-on time ton tdiom _ _ [| en ttt) fe] Veer ay ava [| 30 hs ‘TVurn-off time tor td Ron 250 || 170 | 260 Tiode forward on-voltage | Vso___|_Ie=2 Tor Vos=0V_Ten=25'C _ 4.08 | 1.62 | V Teverse recovery time ts Ts=Iox_di/d=100A/ys Ten = 25°C 70 ns @Tt ermal Characteristics Items Test Conditions Min. | Typ. | Max. | Units i Rincen-« | channel to air 625__| “C/W Thermal Resistance »| ml ae A2-133
FUJI POWER MOS-FET ‘2SK 1087-MR ee MiCharacteristics [_[__io=ttiositaous PULSE TEST. Tenmes'e Hee 4.ov O48 EAH Fesonnarentoreaverty TJ TAC Vos=20V
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2SK 1087-MR FUJI POWER MOS-FET 100 = =0V.f=IMHz TT L777 , i pe Setrecvesee “aasects Roe ee S 8c Roeeee : Vike. Fs 5 tserrrrerer re f aul {| | H- Lp ve im h A a Ha Apes FO peepee nS ACE PSST cose | & HHH mee UN socde//GERBUSGRDRUE eens u pe oc es ee a Sa ee et et LA op Sasa HRA vn ss WO L Hf 4 w SH gee Oh y AES: HH Senne el ao {ft ttt try ror? CASE TTT ° 10 20 30 < 2c + se a 100 VoslV) Qg{nc) Typical Capacitance vs. Vos Typical Input Charge Fontan 20m ArH EERE EH aeteo {AF | [euseresrtrese V1 | | | GER SEEScoereeer SS | sof EH ) , FER ERSERF temestotye a A CEPT yep yy | CeCe EECCA i a . a === a SSS BERETS ES rs BERS ESE ™ EES w * FERRE SECHL eee ° Os 10 hy fo) 50 100 150 Vso(V) TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc Feet aa | , A ee]
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