2SK1086-MR FUJI

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2SK1 086-MR FUJI POWER MOS-FET eee N-CHANNEL SILICON POWER MOS-FET F Ill Ss E R I ES W Outline Drawings Fi al reatures _ 10808 Ps ags02 @4igh current [ in a re @|.ow on-resistance an a a a @Io secondary breakdown Kea al cl al @1.ow driving power 5| 5 2 : @Iigh forward Transconductance ) be aa Applications vece t i | heute } 2:Drain @ {Motor controllers |g | $ Source @(3eneral purpose power amplifier | {| o7:02 4 06 @19C-DC converters suce | { rege0? ence Sco M@ Max. Ratings and Characteristics Equivalent Circuit Schematic @\\bsolute Maximum Ratings(Tc=25°C) _ Items Symbols Units _ __ Drain-source voltage Voss 6 | Vv “Continuous drain current [In| 20 A _ __ Pulsed drain current |Joowy | 80 | Drain() ___ Continuous reverse drain current| Tor - 20 A ~ Gate-source peak voltage Voss | +20] SOV ~~ Max. power dissipation Poo 35 WwW - Gate(G) Operating and storage [Ten | 150 | *C __ temperature range Tow =55~ +150) °C | Source(S) @':lectrical Characteristics(Tc = 25°C) — oo _ Items [ Symbols | __ Test Conditions | Min. | Typ. | Max. | Units —_ Drain-source breakdown voltage | Vasonss | In=ImA_Vos=0V 60 | vi __ Gate threshold voltage “Vosan | In=ImA Vos=Ves 10 | 15 | 25 | Vv . Vos=60V Ta=25C | [10 [500 | A _ Zero gate voltage drain current | Toss | yey Sse [02 [10 [ma __ Gate-source leakage current | Icss |, Ves==20V__ Vos =0V. | 10__| 100 | nA D ree omstate resistance | Ros In=10A_Vos=4V __ 0.075/ o.10l __ Drainsource on-state resistan oso Is 10A Ver =10V 0,050| 0.070) a __ Forward transconductance | gis | ‘Ip=10A_ Vos=25V_ _| 8 |b | a ___ Input capacitance’ Cis | Vs =25V) |_| 860 [1300 ___ Output capacitance Cus | Ves=0V |__| 300 450 pF __ Reverse transfer capacitance | Cs |_f = IMHz ——+ 100 | 150 | Turn-on time ton cre ee _ [10 15 (ton tuon +t) tn) eniey a ooo rr] Vos = 10 5 3 ns Turn-off time tor tao | pe aosa, 150__| 230 tacos tte) to |_ 30 80 _ Diode forward on-voltage [| Vs» | _Iv=2XIon Vos=0V_ Ten=25'C [125 | 1.80; Vv — Reverse recovery time tien Ir=Ior_di/d=100A/s_ Tan=25'C | | 60 ns @‘hermal Characteristics _ Items [Symbols [Test Conditions | Min. | Typ. | Max. | Units _ esisrance Rinen-e) | channel to case 3.57_| °C/W A2-130

2SK 1086-MR FUJI POWER MOS-FET NE MCharacteristics 40} Vos: ve SA Pulse TST co ors Ros(on)=f(Tch) :| D=10A. Vos=10V Coo 8.0 re tenses LTT LO) A SV ccoMn4 § COOSA COO [ so YA Cr err EEA PETIT TTT tt Tei tt | [AG or COOP er Coa AT id ea ad EE Po Eee ere | SSS =Spev— Resiow PO ee ae /// ca a Ate SE 0) Hee oos ete HHH i; Sceeenneenee oP Eee ee eee eee eeseeeesecseae SS Tiaiatt Woe 4 sCOOCCCCE ee) ° 2 4 6 8 -50 ° 50 100 150 Vos(V) TonC'C) Typical Output Characteristics On State Resistance vs. Ton 40r Trew UT TTT CBs IoC : 5 = Vost25V. Tehe2s'c im ae an eee nso LSE Est Teer t “l2sv]{s.ou] [ssy[ ov] lasv[ |] | EEE Soe ec a COPIA TTI a 20 FEE eral go/anafaa foatats 2 if a LETT PEEP AEP oo Row = ETI PP WATT ee @ OAT sey a o| P 4 i Bov. eee EHH epee ert oy ccanee= eS === eee aS a Maanraannaaant pS} ee? 4a LITTT TTT TT Tr Oo 20 4.0 6.0 ° 10 20 30 40 VostV) Wl) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. Ip Coo COCO takes LH 30H COCO ReST Tey stsrttekeos HH) SOSRSSRRRRSREREERRSRE CECE PASE TEST COEEEECCE in| SOO Toh=25°C \\ COC ee Sane COO COC CCE CO COA COCEECCEECCOLL Tete COE 20 eee eee te fay SU RGREESSESEEURREREREEE SECS co CCC re} POPES ECC Eee

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FUJI POWER MOS-FET 2SK 1086-MR

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