2SK1082-01 FUJI

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2SK1 082-01 SIPMOS® FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F n P. Ul SERIES Features Outline Drawings @ High speed switching oo 5 4st @ Low on-resistance poe POZE 8 2 No secondary breakdown r @ Low driving power CR) @High voltage u @Viss= +30V Guarantee 8 @ Avalanche-proof vv Avalanc! p 22 y | fhe 4 + cate Applications | ; 2:Orh | Switching regulators | | uj 05'$2|| 115 5.45, | 5.45 {TT sas @ UPS Co] @DC-DC converters | General purpose power amplifier JEDEC oe BIAS _ SC-65 @Max. Ratings and Characteristics Equivalent Circuit Schematic @Absolute Maximum Ratings(Te= 25°C) Items Symbols [Ratings | Units Drain-source voltage Voss [900 [| VO Continuous drain current | In | A ; Pulsed drain current Iooun | _18_'| A | Drain(o) Continuous reverse drain current | Ine “6 | A ~ Gate-source peak voltage Voss +30, vo | Max. power dissipation Po | 125 W. Gate(G) Operating and storage | Ten 150 °C - temperature range Tae =55~ +150] °C Source(s) @€lectrical Characteristics(Te= 25°C) a - Items Test Conditions Min. | Typ. | Max. | Units ~_ Drain-source breakdown voltage Ip=ImA_Ves=0V- 900 | ee ae ___ Gate threshold voltage Io=ImA_Vos=Ves _ 25 35] 50{[ Vi Zero gate voltage drain current | I Vos =900V Ta=2c | | _10_| 500 | yA OT e—eee—ee | Ves=0V__ Ton= 125°C o2 |" 10 [ma _ Gate-source leakage current Ves=+30V _Vos=0V _ 10 | 100 nA ~_Drain-source on-state resistance | Rosom | I>=3A_Vos=10V — | 21] 28] 9 ~~ Forward transconductance | g0_ In=3A__Vos=25V | 20 45 _[-s —_Input capacitance | iss. Vps=25V | 1200 | 1800 __Output capacitance __ Coss Ves=0V ___ [ao [ 210 | pF ~~ Reverse transfer capacitance | Crss ff =IMHz _|_ 50 75 Turn-on time ton _taton = - - 35 55_ (ten Htaum tte) te Vee=600V lo S68 110] 170 —anolf timeta Vos=10V ae ns Turn-off time tor. two | pas {150 | 230 _| town tt te © ee 100 | 150 ___Diode forward on-voltage Vsp Te=2XIon Vos=0V_ Ten=25°C - 15] V Reverse recovery time Te=lon_ d/h =100A/5 Tan =25C soo | | ns @Thermal Characteristics Items [ Symbols [Test Conditions | Min. | Typ. [ Max. | Units Thovmal Resistane channel to air — "c/w ermal Resistance channel to case 1.0_| “c/w

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Fi | a Pere er Pe Cr Lf | rrr Bee [AT PP Hee ZErrrrrerre ) oC COCO ee eee eee oO 20 40 -50 oO 50 100 150 Vos(V) TalC) Typical Output Characteristics On State Resistance vs. Tch ha CAA - (TT TT TT TT prestonttd 0) TTL tents oe teed feovf &8 [ICT pase test,vosm25v 6 [TPT TOT ase test aaa Tene25'c HH LAH Tonmas'c EEEEEHEEEE FETE HELE tT | [Ty EHH TTT | aan aLL PTT TT ann COCYT om COCO \\ PPT yy | PTT Rowow [TT TUT TTT TTT Zz oy . [yt | TTT a LLEVA Aa ev ws Py Trt TTT) | eee 6 oy LT | [E-EE--EAHH LT TTT TTT ttt tT Sov Ly I Ee PPT TT yyy yt TT Ssoy HAE TTI HEAR see eee CTI CYT TPiriry ° 5 0 cs ° 3 Ves (V) 1ofA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo CoE SanvALgGTRABTANE ase : ! ECE Dees 1 PeCcre EEL = TT] t | TVA TT cops puse test aL Ps PETTY vecwesv = LI HO r] HATH es COPS LT YiT yt tt rh i1- Cee Eee LOPE Pra Ty : CT] FARE Vow aE LPPER EET oe [TTT os IT | tt | w CCT TPE ~ TET rT yy COL Ce TT Ty | [TTT coo nl yoo HEH He i i VET COO LITT i) 5 0 ° 50 oO 150 1ofA) Tenl"C) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten

2SK 1082-01 SIPMOS® FUJI POWER MOS-FET ———— a ae ee eee eee at a | 809 V 20 HH c=t0vos:ves=ov. t= tmz | | =e We LH HH BEE aZ7EEH m | VX KT as cod Fe A ee Ef of ey - ALT re0y [I] |\\EEESESEESS==S==== HES a oR EE EEE EERE EEE EH od Ae ae [Tho KI il H 4 y 7 c BS rT | Att EEE «RHEE AS od A ™) | INU ww 20d AAT HERRERA Runeeicy {+--+} 5} Ct = ee _ EERE EEE EEE Ee Se a 5 0 20 % ° a0 30 v2 Vos(V) Qg (nC) Typical Capacitance vs. Vos Typical Input Charge Ir=fVa0):0ps pulse test. Toh=25°C “TTTTTTT I Hy yaa Pak ESTEE 0! === Po | H sabuaaut Sagat | FEES LT ers "EELS of SSS Sa wm “CTT H N HH w ESSE TT Coo Ne | | PrN EEEEr H H HEH CoP CEE | H L CTTT TTI HHH 5 05 16 ° 20 700 0 VsolV) TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc » EES NT | oc SN A eg Neat SETTING Ee HHH HH FEE HH 1 TU NWINCEEN Tl SN a eter MES USN | Foo HHS Seam HHS) °° E Totes BESS 4 Hi = sail w Fe se sersio| ere ee eee MQ Cr i ae el cow) Seo. ERR e aaa tte ot tH ons SE os EH HHH FHA cs ee SU EF F 6-82 CHM HHH Ha Cries eet TMM Evin CTE CTE TTT TT , hi we 104 o> 0 07 10° 0 or 10 coo us) Vos(V) Transient Thermal Impedance Safe Operating Area