2SK1067 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

+ Low noise NF=1.8dB typ(f=100MHz) - High power gain PG=27dB typ(f=100MHz) - Small reverse transfer capacitance Cys, = 0.035pF(Vps= 10V,f= 1MHz) - Very small-sized package(MCP) permitting 25K1067-applied sets to be made smaller and slimmer Absolute Maximum Ratings at Ta=25°C unit Drain to Source Voltage Vos 16 Vv Gate to Source Voltage Vos £5 Vv Drain Current Ip 30 mA Allowable Power Dissipation Pp 150 mW Channel Temperature Tch 125 °C Storage Temperature Tstg =—55to+125 °C Electrical Characteristics at Ta=25°C min typ max unit Drain to Source Voltage Vpsx Voes= —4V,Ip=100pA 16 Vv Gate Cutoff Current Igss Vps=0V,Vgs= £5V 10 nA Drain Current Ipsg Vps=10V,Vgg=0 MLZ ¥12.0 mA Gate to Source Cutoff Voltage Vesom Vps=10V,lp=100pA 2.5 Vv Forward Transfer Admittance ly! Vps= 10V, Vgs=0,f= kHz 11 mS Input Capacitance Ciss Vps= 10V,Vgs=0,f=1MHz 2.3 pF Reverse Transfer Capacitance Crss Vps= 10V,Vgs=0,f=1MHz 0.035 pF Power Gain PG Vps= 10V,Vgs=0,f=100MHz 27 dB See specified Test Circuit. Noise Figure NF Vps= 10V,V¢s=0,f=100MHz 18 3.0 4B See specified Test Circuit. x : The 28K 1067 is classified by Ipgg as follows (unit : mA) : (Note) Marking: CJ Ipgg rank : 3,4,5 Package Dimensions 2057 (unit : mm) g j 1.0.15 %) s y+ { o-01 ic oO = Fi T x te G: Gate : "19.3 S: Source D: Drain SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN N158MO,TS No.2719-1/4

a m Ip - Vos ; Ip_- Vos Vps=10V Lue fiw) | | fe Tt TT » 7 <? (7 t) ger |] a tT | UY 1 ie ae 1 al LL SA, a So 7] Ye £ ny i q— tf _ 0.4V, a i S| Zo a MY |_| 2ly7 |_| ov ¢ Za B3oZe6nn °% 2 & 6. ry 10 2 os 10 AAs 0 Os to 1s Drain to Source Voltage, Vps — V Gate to Source Voltage,Vgg — V an lyfs|_— Vos a !yis_ - Ip L [YANG i, Lge Em an AWN Sobers $ vale 2 ed es FS £ 5 eli; Uy As “wo 05 ° Os 0 “ “ i) 0 Gate to Source Voltage, Vas — V Drain Currently — mA Ves(off) - Iss O1 lytsl_- Vos ae) ee i tt oT |) te Bx sg So er aj/t | jy pitt ter zif | ft = 2 9 slit eT itt | og & s j acca ey PP | eee e “or 10 10 % z 4 6 D 10 12 Drain CurrentIpgg — mA. Drain to Source Voltage,Vps — V Giss.Crss_ — Vos y lyfs|_ - Iss ‘coe Ce +, Vos=0V 832 3 ec erry Pty as +f —_f . we We a BL TT a a a ey . x) 4 8 2 16 20 Fy 19 10 Drain to Source Voltage, Vag — V Drain Current,Ipgg — mA No.2719-2/4

0 Input Admittance yis - Vos Reverse Transfer Admittance y;5 - Vps

a a a f= 100MHz. CIT » Pe tis a alt TTr + a a _ es DO | eee 44 | tere TT | | [fT “ pf + ff} a | 0 7 % 6 0) 10 12 14 oy 2 4 6 8 10 12 14 Drain to Source Voltage,Vps — V Drain to Source Voltage,Vps — V Forward Transfer Admittance ys, ~ Vps © Output Admittance yos - Vos. P| ft] Vgs=0V | [TT ves=ov f= 100MHz CF f= 100MHz || le! a en eee | ae | esl. 1 egg a) — ss NS aan aaa A ee o Ey 4 6 8 10 2 we ° 2 & 6 Ly 10 2 Wh Drain to Source Voltage,Vps — V Drain to Source Voltage,Vps — V a aon Reverse Transfer Admittance y,; - f [| f a Pee Po at itt Ye . Eo ee A OS 47 fos toma Ee mee J x1 ferret. » pe eee cama wrt Fe ee TT & cisT TAZ os loma | bone Lt TT Le an P ee 2 ee ee ee a ame, _2TmA mG ct cn on en “fae HA o/s Ho 2 OP Frequency,f - MHz Frequency, MHz = Forward Transfer Admittance yj, - f 10 Output Admittance yo, - f pene | TTF TT TTT “fyos=ov | [| [ TTA] YT] a - LCG of figs PEt |, | feta 2 2, = SSS [tA 1 | SHEN TD) 4 eee re b ECO Tres | Gee TTT; At eps ee WY ° Ip=10 > 77 a Ce) a a a oie Te | Fomet Tit TTT 7. aa a [74 L am} ee Frequency,f — MHz Frequency,f — MHz No.2719-3/4

7 PGNF_~ Ip a Po - Ta

0 f=100MHz, wt | ma] tT ser gt HN San 4 3 fe br i] i = Ror Ear) g) ae g ef) [TT TT i a4 5 wo AS sed eq. ti iN TT 2 _| % ete | TT 3 { Heb ww a CI Liil Ty yt | et SH ol <0 IN ir) 10 020406080 1 0 Drain Currently — mA Ambient Temperature,Ta — °C PG,NF Test Circuit u t2 50 50 ii "] cd YG vo L1:1.0mm®@ plated wire, 10mm® 6T, tap: 3T from H side L2:1.0mm® plated wire, 10mm® 7T, tap: 4T from H side Unit (Resistance : 2, Capacitance : F) No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. HM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: © Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.2719-4/4