2SK1035 PANASONIC

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Technical content

Silicon N-channel Power F-MOS FET @ Features @ Package Dimensions © Low ON resistance Rys (on) : Ros (on)=0.2M (typ.) Unit: mm © High switching rate : = 100ns (typ.) 2. Aimee © No secondary breakdown =) SImas i © Low voltage drive is possible (Vos =4V). | E ~ @ Application | ie Paper) @ DC-DC converter > | © No contact relay © Solenoid drive | i T smn © Motor drive be: z O7mas. bs i ease | 25202 Sores @ Absolute Maximum Ratings (Tc=25°C) === ier | Symbol Ua aie. Drain-source voltage [3 ST ee a 2:Drain | Gate-source voltage (Sn ee ee 3 : Source eaea ae te ete TO pc ctw a Power dissipation [Tac] "° [ae | Channel temperature [tale van Me Storage temperature Tag —55~ +150 c @ Electrical Characteristics (Tc=25°C) Tem Syrbel Cr Lam] op] mae | Une Drain current | toes | Vng=130V, Vig=0 | a= |: | ek Gatesouree caren ee A a i a Dea source voltage AGS a ee a a Gate threshold voltage Vin | Vps=10V, Ip=1mA a a Ne BE = Drain-source ON resistence | Relonil | Ves=W0V.ly=6A | ~—~«| o2 | 03] a § Dran-source ON resistance | _ Rion Dos jes| oe = Forward transfer admittance Vis =10V, Ip=6A ) s-} 68 ts input capacance x= [| ef Output capacitance Cos | Vis=10V, Vog=0,f=1MHz | | soo] =| Reverse transfer capacitance) Crm as es Turon ne He Se ees a 2 Fall time AES Soi [wo [| Dey time | -tavoi |] Vemsimev Re a 3 es t —3137— Panasonic