2SK1024-01 FUJI

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2S K1 024-01 FUJI POWER MOS-FET as N-CHANNEL SILICON POWER MOS-FET F ll SER | ES Features WOutline Drawings @High speed switching [COS | ® Low on-resistance age @No secondary breakdown 36 ~ Saale Taps @Low driving power 3) Z | 1 @ High voltage Perr 4] © Voss=+30V Guarantee " © Avalanche-proof il =. A 5 agi ow \\iII]o 2 4 ote Applications The? | oe Switching regulator: ‘ urs 9 1°9 . zoel, Lesa sete, Wexa @DC-DC converters General purpose power amplifier JEDEC T0-220AB MMax. Ratings and Characteristics WEquivalent Circuit Schematic : @Absolute Maximum Ratings(Tc=25'C) Trems Symbols Units - Drain-source voltage Voss. Vv Continuous drain current In A Drain(o) Pulsed drain current Tncouis A Continuous reverse drain current] ox 35 [| A Gate-source peak voltage Vass +30 | V o! Max. power dissipation Py o_ | Ww Gatets) Operating and storage Ten 150 °C Source(S) temperature range [Pag *C @Electrical Characteristics(Tc= 25°C) Items | Symbols | ____Test Conditions | Min. J Typ. [ Max. | Units Drainsource breakdown volage| Vaownss | Jo=ImA Vas=0V a Vv ___ Gate threshold voltage Ip=ImA_Vos=Ves 5.0 Vv 7 o aras 7 Vis =900V Tn=25C | | 10 | 500 vA Zero gate voltage drain current | Ioss Vvee=ov Tastee | mA ___ Gate-source leakage current | less Vos==30V__Vos=0V_ CC © __Drain-source on-state resistance In=2A_ Vos=10V [| ao 55 | 8 Forward transconductance Ip=2A_Vns=25V [| 20] 40 | | S$ ___Input capacitance Vs =25V | | 800 | 1200} Output capacitance Vos=0V [Tc 80] 120) pF Reverse transfer capacitance| Cw —(|_f_ =IMHz ff 30 | 90 Turn-on time toy [tow Ty a 600V b= 35a [30 ——_lton F taror Ft) Vec=10V [65 as Turn-off time tow Ren 250 110 . btwn tt) “ _ 60 | 90 | ___ Diode forward on-voltage Ie=2XInx Ves=0V_Tan=25C [| | 0.90| _135| ~V Reverse recovery time Te=Inn d/h =100A/ps Ta =25C | «| 700 ~«| Ss ons @Thermal Characteristics Ttems [ Symbols [7 Test Conditions| Min. | Typ. | Max. | Units A2-115

_ FUJI POWER MOS-FET 2SK 1024-01 Characteristics Epa (Eee eS | EF vesreoy ov gov oy sev ov | cual Coo | So.) a EEE tt ert Fo Sooo eo So oe SC ee L-| |} ge COCceeoeoe Coz ey sa oo or CEE Eee a b --+ f+ -- Ron FESEEE eB eT rH [Tt w CO @ eer ey a” ZA AO RERDS 2 eRRE oa TOT tA ev eerie a eer CoCo AB ey Goce eee i (Cee a ee a VosV) Fen! Typical Output Characteristics On State Resistance vs. Ten al 3 ST, Ton=25°C TT rvaheoe pusetesr | Neecesv Sov Savy aI a [| Itt | Soecet soeceess A

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ry a | Senecieeeceeee CoS See a a | es Poe POT ITIL BREE a ae A EEE ERE EEE jararaca ee a ee A se HERE EE ee a, A a es ° 0.5 My oO 2 4 Le 6 10 Vaal) i Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo of8=10 0):80ys PULSE TEST Vose25v, Ton=25"C ALT Sere Pa a 6 = ” ~+~. | | | | pert LT aha. nox. | ERR “EHH fee EE pratetet tS LIA | Ty yy Ty 30] at a ad os tf | | veww FEE LY TELE] LT LI © FERRARA Ss SEREGRRRRSORERS FEAEER EEE CoCo A | LEU a ry ° 20 woo 760 1olA) ToC) Typical Forward Transconductance vs. Io Gate Threshold Voltage vs. Ten A2-116

2SK 1024-01 FUJI POWER MOS-FET ———_ EEE eee 10° Peet PE AZ Pee S SSS fo — a so REEECEE EEE PARSE Goa, ves | YATE 720 RO) cone CT 8) A Stan ceeeeeeD CoS St cos bo soo HI A of) ESSE SEES ar a ae Vee ANY A es COOTER SSEEET os] W apo ph CES 4 =< 200; h— Voo= Coe cee Hehe rey EE LTT PR Sera we a ee Vos(V) Qg{nc) Typical Capacitance vs. Vos Typical Input Charge LL Timrerton masses | T ] “FAN Ee AG === === SS == cone HH =——— aa a : SRE HH a a CI AN POC mee — wept} | SERRE Nee =====_--—-===== rm TLL iS CI » “EREEREEP ESS w STEN @ AREER EEE aes SeSEEEENEEEE Ca LLL COSCO oO Os 10 oO 50 100 150 Veo(V) T.CC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc \\0 ee ee inl \\ a OO eS PERSP AUN Sete eee ect et TT TT SOS Foe Hb oth Ht LO EANUIA UN [eo] ol SS ee | LN SN a et Io reeese [PSS STH SS ae a Catt ww) {NST i eee | i) SLI. SS roms Pettis 0.05 Ht > SS a N rc [7 0.02 Torro Com 0 ee Eee (ot aie ee 10-8 107+ 1o3 to to 10° 10° 10 107 108 u{S) Vos(V) Transient Thermal Impedance Safe Operating Area A2-117

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