2SK1023-01 FUJI
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a. - FUJI POWER MOS-FET see N-CHANNEL SILICON POWER MOS-FET F ll SERI ES MiFeatures Outline Drawings @ligh speed switching | @low on-resistance age @ Io secondary breakdown oe Sats [aba @l.ow driving power ety | i. @ltigh voltage Pes yt | @Vosc= £30V Guarantee lows “| © \\valanche-proof TI, I|- ap | Applications cell, & 1 Sate PP a | Saree ®@5witching regulators 1 | 254 254 oatpy 7 ours ob pat @ 9C-DC converters = © 3eneral purpose power amplifier JEDEC T0-220AB EIAJ SC46 Max. Ratings and Characteristics WEquivalent Circuit Schematic @\\bsolute Maximum Ratings(Te=25°C) _ Items Units ~ Drain-source voltage _Voss 300 Vv — Continuous drain current ia ~ 4 A Drain(p) ~ Pulsed drain current Topsy 10 A — Continuous reverse drain current| Ton a __ Gate-source peak voltage Vass Vv cate(s) © Max. power dissipation Pp [oo | Ww ha Operating and storage Tn C Source(s) _ temperature range Tate —55~ +150 Cc @ =lectrical Characteristics(Te= 25°C) = Items [ Symbols [Test Conditions | “Min. | Typ. | Max. | Units __ Drain-source breakdown voltage | Veorss | Ip=ImA__Vos=0V__ [800 || Vv __ Gate threshold voltage Vestn Ip=ImA_Vos= Ves . 5.0 Vv vie voltage ay Vos =800V Ta=25C | 500 uA _Zero gate voltage drain current | Ins Veen 0V Tans nA — Gate-source Jeakage current_| Toss Ves=+30V_ Vos=0V 10 nA ___Drain-source on-state resistance | Rosiom Ip=2A_Vos=10V 3.0 a ___Forward transconductance | gis Tp=2A _Vos=25V 2.0 § “Input capacitance Ciss Vos=25V [| 800 _ | 1200 — “Output capacitance Cass Vos=0V 80__| 120 pF ___Reverse transfer capacitance | Cres { =1MHz . 30 90 Turn-on time ton ta ye _ [| 30 45. hbo Ftagom Hts) i yeray bean Ty 65 | 100 ns Turn-off time torr tacost) Re 250 [| 110 165, ___ktejorn Hts) tr ° [| 6 90 __Diode forward on-voltage Vso Tr=2XInn_ Vos=0V_ Ten=25°C anf 138] V ~ Reverse recovery time te Is=Ion d/d=100A/ps Ton=25C [|_| 700 | | ns @ Thermal Characteristics = Items [ Symbols [Test Conditions| Min. | Typ. [ Max. | Units _Thermal Resistance Rincen-c) | channel to case | 2.08 | “C/W A2-112
2SK 1023-01 FUJI POWER MOS-FET MCharacteristics r Co oF pee Fp Bantialieon ee PH EE RR eo SCOOT | Ton=25°C Fp “Saye ECCCCCAPE eee ee 7a ECOCC CACC jo ~s1 + Eo Ae Ee FEES Se ae POCO ey , Sov Se> Aaa BEUUnERETSERAAREE ZOE = 4a Pesee EEE ae a 2 ee ee ee estou yal ta) [OT a ia 4 [Trt TT ey a a aE GEURRERPZOSRAeScanene ae) Ae Cheer eer or > i FEES es CO a qt tt A a eee eee ee a oO eee) ° 0 20 30 40 60 50 ° 50 100 150 Vos(V) TolC) Typical Output Characteristics On State Resistance vs. Toh [_] Poston =" of: us PULSE TEST, Ton=2sre | | JES vos=25V. Toneas'c “T—] , pese[eeurrs: Pere sae Ges Pee oe ae —— | itt] AOC EOoICor ee Peer “CFA Se COT Fle | fey yyy i 8 ee = on | LU TE rrr Rose 4 = a ClO ° 7 6.0V 2808 see (a) sey | cov [| ta) ae Lee sey 1 ZOO AE ere [ied ee aly 1) Coe oy COO 204 a He ia a > LED TTT aT is) 05 1.0 ° 2 4 6 8 10 VeelV) 1fA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. In stradonostaseaior! TT SCOCCUPCE err LUPE ET roe [TY CUT TTT eer . ALE Tee A 4.0 Ler CT CTA TT Pree
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LIA aR RF aq [pes POZE PALE TT TT | COATT TTT oo PET ee TTT os AVE TTT TTT TTT re ee 7 ee COOA eed © CC My COA PR CETTE TTT TT Pr) COE TTT ° 2 ¢ 6 3 ° 30 10 0 1o(A) Ta CC} Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten A2-113.
FUJI POWER MOS-FET 2SK 1023-01 eee @ Characteristics — 1009 20 Nana Gates aesov.te ne ll FISF vetooionsn fT] oN att pt iss Ct 7 SSS ood EERE RRR EEE a oe 2.7 A A PH Po Ae Nes 1 a roo a 2.0 INEPT oo A Sov] \\ A | FETT ov, co _ es 277 oo PESEESSERERSEEEOM J CE see SSS EE Ve CIC) EERE SSE a 279 Ae EAA re ma cod fice EE HTT HT oo ras ee TTT) PASSE o or? 2. SSS —— ee is} Le) 20 30 i) 20 40 60 Vos(V) Og (nc) Typical Capacitance vs. Vos Typical Input Charge LLL izopeoentstreet |] “COON Ss PEE == SS LX [TTT a | LeEES i See eee N a | a NI L CCE LETT TT TXT TTT anna UC BESSESRNGESREE “ESS > [I | fe eee a ia \\ a ESE wo SCOPES FRESE SESSSRERRREANEE SURED AREER PELE . LEE PET TT Tritt N ° 05 10 ° 50 100 150 VsolV) TCC} Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc Toon , et et j SSE SS rrr ieee tanh eaer Ser eeiaiemetihomastett att SC ee ol CSU TT ete CCU CTT HE NAIRT Noe 7 Ere ee Epes ese Cin Tih aii ae ree erent oe || il) ® ER HOSS cow) Seti 0.05 tei Sd | NN ir Fag oo aaPooe EH rih al TTI 5 oe [| SSN eng HAA ot oe py ons
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