2SK1017-01 FUJI

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2SK1017-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F I SERI ES MFeatures HOutline Drawings @High speed switching ag? @ Low on-resistance cow PE $ ~ 3: 2 @No secondary breakdown _ @ Low driving power (ey st Fy @ High voltage r g| @Viss= +30V Guarantee (OxOK©, @ Avalanche-proof 22 Ty Whe 4 1 :Gate . . I = 2:Drc Applications Iv 5 Saree . . us 15, @ Switching regulators nae tT sas e@uPS @DC-DC converters _ ® General purpose power amplifier JEDEC —_ _ eI SC-65 M@Max. Ratings and Characteristics WlEquivalent Circuit Schematic @Absolute Maximum Ratings(Tc=25°C} + items Units mn __Drain-source voltage Voss Vv —_ Continuous drain current i a) A _ ; Pulsed drain current Tous 55 A Drain(d) ~~ Continuous reverse drain current | Ipx 2 | A Gate-source peak voltage Voss £30 vo ___ Max. power dissipation [Po | 150 W Gate(G) Operating and storage “Tea {150 °C temperature range Tue °c Source(s) @Electrical Characteristics(Tc=25°C) 7 ~ items | Symbols | ____—Test Conditions | Min. | Typ. | Max. | Units Drain-source breakdown voltage [Ib=ImA_Vos=0V_ 450 | vi Gate threshold voltage Vesam | Ip=ImA Vos Vos [25 35 | 50 | V vo gate w a Vns=450V Ten = 25°C 10 | 500 BA __2ero gate voltage drain current | Iss Viezov T= 125'C 02 To mA Gate-source leakage current_| oss Ves=+30V__Vns=0V [| 0 100 nA Drain-source on-state resistance | Rosin Ib=10A_Vos=10V 026] 0.35) 0. Forward transconductance In=10A__Vos=25V 7 iu Ss Input capacitance Cus | Vos=25V 2200 | 3300 _Output capacitance Coss Vos=0V 320 | 480 pF Reverse transfer capacitance | Cm | ff =IMHz 140__| 210 Turn-on time ton tam | _ _ [_ 50 (tant taom tty) tr yey r=20A 200 as Turn-off time ton toon | Ro=250 [ 300 (taarn tte) t | _ 190 290 Diode forward on-voltage Vso Tr=2%Iox Vos=0V_ Ten =25°C 125) 1.88|__V Reverse recovery time In=Jon_ d/h =100A/ys Ton=25C | | 500 [| ns @Thermal Characteristics items [Symbols [| ____—Test Conditions | Min. | Typ. | Max. | Units Roxen- | channel to air “c/w. Thermal Resistan - aa A2-103

FUJI POWER MOS-FET 2SK 1017-01 Characteristics FT ative t, Teh= 25°C ah La feves80us pulse test To oa LLL TC . HH 7 aan AR Ho Ros(on}=f(T.ch) 1 D=I0A,Vos=10V — ra a / Cer } Z a // al COA EEE ov COCC Peer per 30 0.6 Foo <8v TTT 4 im TTT er a) yw i Cocco Cee ae A See eee ee eee COCCePeC oe eee ar ed Poo Pry oa Le ee YA Rowow LLL TTT RTT eer TT [a @ Het eee w COCEEREEEEEES Cc a) ManP Caeee - ITT a ode LET COT ane a [1] “Tabert | | TTT TT | [TT TTI (ly SiGSE00ERERRGRRRORROn Pe EEE CeCe coerce aaanal Pe gy 9 CoO ° 10 20 30 -50 ° 50 100 160 Vos(VJ Te(C) Typical Output Characteristics On State Resistance vs. Ten im im 1o=f(Vos):80us pulse test, os=25v {| 7 TTT] cory FETT teneese is [45¥ 80 580 Ros(on)=t{ o):Ves. Toh=25°C | ce e T TTT TTT T Mleov TAHT esv TTT Ecce EEE , FERRER (CCCP Ice PERE EH EEE EEE (COC Ie ) SEE rt FE 1 | | HHH -=—--+—44 wo FO 14 Ty | “OUT EERE RSE EEE S00 SHI HET SER AEE EEE fom POCO ee se TTT TT @ POOP rr @ yO eee aw = y EEG PO ee [Ty i ea os a A ya SSeS eee Sa | a Poteet et ia EERE LLG A COO O ° 5 10 6 o ” 20 30 40 VostV) 10CA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo FE emi eois piso et CLOT [| | vestm=rcrem te=tina, vaseves | | | co “eet eres ree FSH Besa ne HH rm0x. Corr eee Perey t = CeCe el ibcaaeaneeens EEE q SCOTT Eee LOT [TT y] COC era aa COCA eee LPH [TTT] EA Sie Psa) SESS US Le Pee Gee iz FSR E Veo TTT Pees TTT A 2 sf CAE} i ee eGo ee CELLET [| (8) SECC eee CCE PCL CELLELL Pee HERRERA EEE] LOTT TTT) ° 10 20 30 40 ° 50 100 150 Jol A) TaCC) Typical Forward Transconductance vs. Io Gate Threshold Voltage vs. Ten A2-104

2SK 1017-01 FUJI POWER MOS-FET Characteristics ee 500 on | Co LTT 2° (EEE ctemnienov- oie He FEE vanrpioneon SEH A 4 a . Ro ooo ESE EE \\ aaa Se. CRA ae H NT Aves Aa ve= TT ives TASS gov IOC \\ TT soo EEO oev oe oe SS ——— a ro ReESS ESS EASE 5| BERR Se RSS BREST TT Ty ye rrr i D DZ CO ANSERFRRESSEEL cose eo ET PAE vy, F. SY “I Vos ee o CPS eR LEEPER RR | ERE Sc, FRR whet Ae 2) Fe <r os ec See 90V A A OO A | Co SSS TTT O 10 20 30 ° 50 100 160 200 Vos(V) Qg{nc) Typical Capacitance vs. Vos Typical Input Charge eee ~CR ATI [I Za ‘ Po=t(Te) Srocroresr scenaa LPS ree ORE RREREDA00RERE EER SEEE HEH === —— == wo SEER EERE REE EEE EE See ae COCCCCCeeeeeeeee TEPrr INT CO LET PTY PTT TTT Tr LTT Ty TT Tin tT | Co a pe COC === =— === SSS ——— ow) sh TPT TTT TT NTT == —- eee fA) | SAREE EEE ~<} ee LLL TEE CECCCEECeCeorcry ° 05 10 1S ° 50 100, 150 Vso) T.CC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc Feta teen (| me 8 SSN NE baat Ay TNT oe Les BSUT EON Bea Fee o Eee SSN co a | ee ee SS tee ete O° os 2S ee Et NS SS ete le aS Kt ae E os Tt aero ttt NK NCO ee gee mT RTANWNN SS Se eee see te Dotty wees =... s (c/w) SO) ee pet Con ee + 4 RRR St A ee Sat 0.05 tito T OM Ft +4 os Cee er Ot o.o2 THI Coin ati FA ‘ Pht ston o Prite te we TI Coorg 108 107* 1073 107 17 10° 10 1" 108 10° t(S) Vos(V) Transient Thermal Impedance Safe Operating Area A2-105

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