2SK1016-01 FUJI

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Ep) 2SK1016-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F Il Ss ERI ES Features WOutline Drawings @tligh speed switching <a. gaze 45, @ Low on-resistance 5 @llo secondary breakdown rm @ Low driving power (EN @tligh voltage 4 @\\ oss = +30V Guarantee g © é.valanche-proof ell MW The? & 1 Goto oer = 2:0r Applications ml ! 5 Shure eawi Ue sige [ss @S.witching regulators sas || | Tees e@UlPS 15,082 @[IC-DC converters | a © Cieneral purpose power amplifier |_JEDEC a BAY SC-65_ ™@ Max. Ratings and Characteristics Equivalent Circuit Schematic @/.bsolute Maximum Ratings(Tc= 25°C) : _ Items | Symbols [Ratings | Units San ~ drain-source voltage Voss | 500) SV _ __Sontinuous drain current bo 6 | A _ Drain(o) __ Pulsed drain current Tooun | 60 | A ~ Sontinuous reverse drain current | Ion | S| A __3ate-source peak voltage | Voss £30 Vv ~ Max. power dissipation | Po | sass] SW Gate(s) Operating and storage Tea | 50 | Source(s) _emperature range Tore =55~ +150) °C @t lectrical Characteristics(Te= 25°C) —_ —_ _ _ Items Symbols [Test Conditions | Min. [ Typ. | Max. | Units ~_ Drain-source breakdown voltage | Vionss__| In=ImA_Vos=0V 500 L_ v Gate threshold voltage | Vesem | Io=ImA_Vos=Vos 25 | 35 50 | Vv ; 7 Vos =500V [__Tn=25°C 10 | 500 uA __ kero gate voltage drain current | fess | Wes=0v_ To=D5C_ 02 [10 [mA ___ Gate-source leakage current _| Toss “| Vos==30V_Vos=0V_ 10 | 100 nA __ Drain-source on-state resistance | Rosom | In=8A_Vos=10V 0.36] 0.55| 0 “Forward transconductance | gy | In=8A_Vns=25V _ | 5 wo | | os ___ Input capacitance Cis | Vos =25V 1800 | 2700 _ Output capacitance Cos | Ves =0V [ 270 | 410 pF “Reverse transfer capacitance | Cs __—|_f =IMUz__ _ 120 | 185 Turn-on time to, tatoo _ was _ 70 | 110 tant tuons tt) te Vee=300V Ip=15A 100 [150 Turn-off time torr tw | Roose L 250 | 380_ — tuo tt) te [so | 20 __ Diode forward on-voltage Vs» | Ie=2XTon_Vos=OV_ Ta=25'C | | 20} 6 | OV ___ Reverse recovery time ter Te=Ing_di/di=100A/ps Ten = 25°C 400 ns. @ ‘hermal Characteristics _ Items Symbols [Test Conditions |_Min. | Typ. | Max. | Units ‘Thermal Resistance Rinen-w | channel to air _| “c/w _ i Rinna _| channel to case 10 | °C/W A2-100

2SK 1016-01 . FUJI POWER MOS-FET Characteristics ~] To=tevosnBops puse test.teneas-c |] A a im sn el ali 1s {{fenefTenst or SAnves=iov 4 veemzov pvgov [> mb LY _ f. wR CRECELEHE CECE eed BSeP aniszaii tetra | f-| | [77 &.0V Rosin COCA rh in| lo fo Cl ta) | Naunnpeauan Bay soeeeeeeee sirieeaepssbeececentes Fo sor 4 i Leer cs oo ASG Sart ane 4 i: HAA Co ica ¢COEEeo Perret ° ie) 20 30 “50 ° 50 100 150 Vos(V} Tale) Typical Output Characteristics Transient Thermal Impedance Fy Cpl ne 7 Oooo 4 {PHtcetveszeoys Wag TaovessTene 256 C4 sol J lpuse test | is _25VS.0V55v 60v _65v__7.0v +4 I ATLL a a | + | | Ko [| | LI IE - CIC "EEEET GREER Oe Bieter eeneeeneee BREESE EEE o aa EECA] @ JCC oon o ) Ht J a cy i ch bl 77a Hi =F Peer BEE EEEEE BESSSTOHSSHSETSIGE Ci d EERE EEE ° 5 70 ° 7% Ey 30 Vos(V) ILA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo ‘S[pto=fTor8Ops pulse test.vos=2EV TONES | | HH LE eer sll LT vesmtctemio=imavos=ves | | | aan H A PTT ‘mor. E Ft = aa HH ae eennen Lf a SaEEEEE oh Pee le TT Ly : Alans sf 2 joa || ots HE Ven [| (s) ti Aa HA HHH 4 oO 10 20 30 ° $0 wo 150 (A) Tale) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten A2-101

FUJI POWER MOS-FET 2SK 1016-01 EE SEES S007 Coy? Feit EE tistapntonea Wy -=-4 Bee Pee PeggueBecer </cacagetp t- soon Pye ven Ny pi EES oy \\ ni Geer oe List 250v NY] [| LL "| 300-4 am SAA 400V. he SSS BREE AEE AS E-b=bd = PA AS SEER EREES REE SA c ASEH a im 200} 4 YH rH He ls oo FST He HERES? v= Teeeeeaae » HRSRRe EEC (v) woo fave= CPP eerrr, ~ ee att Fanetaey at 4 i =| PK Nek ma =| = a Lo Se5E5SCSE===== See i) 10 20 30 ° VoslV) Qg (nc) Typical Capacitance vs. Vos Typical Input Charge Trer(vs0):80ps puise ity ATH Pe -H [| os on AA aoe lotr ma eee es ey ee IN === Seas L— Lt 4 SHER RR RSE SHEA - ae FA ij freee ie | “cH a conn ES ee eeeeee w N w peee i ra =< oH LSSCoH [ty a CI | ell H H SEE EES °O os 10 us ° 50 100 60 VeolV) T.CC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc asses crash a eS {fortes 0=o.01Te=25'0 = tH i a AH Series i Saie Saar Pimar3 On| 2 10° Lect 0 Screen reece Eo SS ea SaaS Saw 4 Pd ‘ ee =F Nena i Foe ae eae na ‘. | to SS Cy rH lo CPA t N I cm Eee Sh. Fae Eo ]n, Sa Sete Eeeten oH o.o2 TIT Trt TT 4 ct SNe i eects, Fen NN ws 10+ o8 107? tot 0° 10! 10 0? cod (8) Vos(V) Transient Thermal Impedance Safe Operating Area A2-102

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