2SK1014-01 FUJI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
! 4 2 - FUJI POWER MOS-FET N-(CHANNEL SILICON POWER MOS-FET F Il Ss E R l ES Mi Features Outline Drawings High speed switching osm 45808 @ Low on-resistance some 2 @Mlo secondary breakdown @ Low driving power / 4 @tligh voltage 7 EY @\\'css=+30V Guarantee 9) ® e @/valanche-proof 22 lay Whe % tote | © : 2:Dr Hpplications t l | 5 Source 6 uu 0.5% 15 @<.witching regulators 545 Th sas eLUlPS @[IC-DC converters i _ . __ @Cieneral purpose power amplifier |_JEDEC . — ___| EIAJ SC-65 M@Max. Ratings and Characteristics WEquivalent Circuit Schematic @Absolute Maximum Ratings(Tc= 25°C) _ Items | Symbols | Ratings | Units Oe ~_drain-source voltage [Voss | 500 | OV “Continuous drain current bo wz i_A Drain(p) __ulsed drain current Towoiy 36 A “~Gontinuous reverse drain current | Inox | 12s | A __Jate-source peak voltage Voss | £30 | OV ° ~ Max. power dissipation Po | 185 W Gote(e) ‘Dperating and storage Tx | 50 | CC = Source(S) __emperature range Taw =55~ +150] °C @lectrical Characteristics(Tc= 25°C) i ee _ Items Symbols | __ Test Conditions | Min. | Typ. | Max. | Units ~ Drain-source breakdown voltage | Vusayss | Io=ImA__Ves=0V 500 | Vv __ Gate threshold voltage Vosan | Io=ImA_Vos=Ves 25 35 | 50 | Vv tage dvain Vos =500V Ten =25C 10 | 500 vA _ Zero gate voltage drain current | Inss | Wos=0V_ Tn = 1250 _| 02 10 | mA _ Gate-source leakage current | loss | Ves=+30V__Vos=0V 10 | 100 pA ___ Drain-source on-state resistance | Rostom | Iv=6A__Vos=10V om, a ___ Forward transconductance | gw | In=6A Vos =25V 40 | 3.0 | Ss ___ Input capacitance Cis | Vos =25V |__| 1400 | 2100 __ Output capacitance Cos |: Vos =0V |__| 180 | 270 pF “_ Reverse transfer capacitance| Cis | f = MHz _ || 60 90 | Turn-on time tor tavon =amy I= 30 45 (ton-+ teen +t) re) Yeeriy Toe IQA 110 | 470 hs Turn-off time torr tain | R.=250 150 230 ___ Diode forward on-voltage | Vsp _| Tr=2XIpr_ Vos=0V_ Ten=25'C ll 15 Vv __ Reverse recovery time tir Ts=Ion d/h =100A/ us Ton = 25°C 500 ns @ hermal Characteristics _ Items [Symbols [Test Conditions | Min. | Typ. | Max. | Units Thennal Resist. Rinen-a) | channel to air _ } —{ ssa “c/w ___Shemmal Resistance Rincen- | channel to case 1.0 | °C/W A2-94
2SK 1014-01 FUJI POWER MOS-FET OO @Characteristics a Mid, 16 1 * ‘1 ves=' oh Co Pane » peep {TT COC [Py | ow roy Coo r
20 Ye OV oy HH m4 [TI
LTT | TAT Fssy oy | SSSR ATT Be Zane vo eee a LOTT Te ar ana) 4useeee PEC HEH > Reesiow - oa bo Ll We TTT ta) Cer ee Co any 4RReee eee CO eer A se PC 08 eFC rr AS oe Ee aH Po ATCO TTI EE PACER EE sv Heer Ata POP ere Vi TTT TTT tT Trt oCODCCC ° 8 cy 24 50 ° 50 100 160 Vos(V) Tenl'C) Typical Output Characteristics On State Resistance vs. Ten C] Toa r] sot Ros(on)=f4 ):Vos. Tch=25°C EH 4 Dus pulse test,Vos=25V Ffasv 5.0V 5, 60V 6.5V —— Tone2s'c a \\ +H SES ERE HEEEEAC 20 ee LETT ESE EE EEE EH CERRY HERB SEEAEEEEEEE Cee [TI wre TTT Rowew TIE eee » COLCECPCEE LLL CIP, a Co a A A | ww) Hy eee ey i{ ttt ee TY HEE EERE oe PEP Ay Geer eee eee ee oo a 5 10 Oo 10 20 30 VoelV) (A) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo co = Hy seiornniet TTT Beep rains pee =: 25% | 5] eee er TT HERE ne EE a » ARR ee 2 anne eee FREER ERE EES Cee Pree Sd a So HO BER HSS we Se A+++ SS] CT 7 TTT TT Try =e 4 AA ve GEESE ee s§ EEE ed wy FEEREEEEE EEE EEE | a © PPT PeLLeLe ee fe eee os PPP yy TTT TT Tre oe oe oO 10 20 ° 50 100 150 1(A) Te('C) Typical Forward Transconductance vs. Ip Gate Threshold Voltage vs. Ton A2-95
FUJI POWER MOS-FET 2SK 1014-01 fy js a 500 20 pecherrereee SSSSens Zonas SES [7] oss B00 ns Fes FI (roc) RRR Age OWE SE =a Be S00 TH] REE EERE ERE 20g} EPS 0 The SARS EA AA —— ¢ ATS EPP AE AA oe oe | zoo} AAT fe , at Coss a Ye ee ee Vv. NI TT vs FAAP Per les TH ASO on roe se tf w OReZeoeEer rey ™ FERS Ra SSeS oe & vo es, Se SSSEEeESeSEeTEneeae LAKERS 2s0v > | A PAReeh 00 v ° 0 20 30 ° 40 0 72° Vos(V) Qg (nC) Typical Capacitance vs. Vos Typical Input Charge 2 ee | ok itt es or = LTPP NT a LP PPP Ne Ty TTT Tra a NCE CY Tenezs'ctyp. | NO wrk tt ft pe» LS CNTY ss ee « TTT CERO or | es | w COOOL Nee Sse TI 40) He LT TT PTE NET “ WET TT Ty Ty [of 2a CEPT Ee AN a CEPT T Pr Trt rN a) 05 10 18 ° 50 100 160 VsolV) T.CC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc EHH TH to=tivesio-o.or tease TT 2 Si ic a te aS 0.59 bE tam AT TTT INN ps peat TNT NO Nee Pa) ON A oe ee HAS Ee ee Tt iia | Yt ms See clea Hil = ww) [L iS a. othepnn eee LUI ET LL ll wae TIL seeks SectsH Sere 0.05 SSH et To HH CT Tit SSA ERS o.o2 TI Frnt TH Ci HEE Neon wo eeHiio . Ul 0 COM TTT TN 10 10+ 108 102 107 0° 10 ro! 102 10° tS) Vos(V) Transient Thermal Impedance Safe Operating Area A2-96
- CMAFIAOAS RUROLR, RHE. F- 2, MB ADRS E) SMM OUMEH ORM, RAAMOMAI bY MMO PE < BMENSIEMHVET. COA OPIDIAMENTOSNREEH EN SBA, TOMRO RMD EAF LCF DEMBLTC HED.
2 PAFITSIRMETH SOMMS, SLUR SLA LARA CMAERMRTSEOTHY, KAP OTIC ho TLR
He, TOMWHEMOFHIS NT S ARAER 2S HMMOMBET ILO TIAN SHA, 3. BLRMAEA TN ROBE SMEOMLIZBMY TOES, LOL, PARAS SER CERT SEEMS DET. ALBAN EMAN ROAM A BRE L TAMA. KKB ESMMIONT SS, ANIA FES ITM, WR Laat, PMT ERLAat Se ERS MRO AMO FMC TCR SM,
4 AAP OAICRME TAMA, BMOAGMLMRRENS FROLI CUT MAOM ARB SHSOE SRL THEN
ThEet, sdyta-3 + OAM MR Re RAD) pata + CER RAF AAC a TR + RETA UR RD FRE RAO Ky bh mE 5, BAF OAC RMOWAE. TROLS CHROME ENOL RAS SRK E OP ROS SRS, PUBL HMOL, TRESTC HEED, COA FOFON ME NSOMACMNT Sik, SICA RNABL MRM RL BML TE, MEMO LEO KSI Sy IT aT VAF ARE, REMEOKYOWMNSGFREME SIL AVE TT, MRS AK, MO E) PEPE AE + TELE Re + 8 AMR OHA WER / PLS BEMRO LAN SME 6. MO TRIMERS BORENS TROKIS CMMI, AA FO TIACMONDE MALAY TS RED, PAS + RAE ATE ARR + Fe » UBER + BRS RE 7D AAZAIPO—-BEASEMOMAMM IS DTS, MANES AHO RMR ATH, 8B INAFOSOASIIOAWIO RHO XLS. REMIT BH RE AS, TOMTERMWIAHM LTS BE, A ERM ROTH ARS Ed AIS IEU Pet te BATUE SH TMS SOME ALTE £5 BOTH EAS a Brewmatstt MFRRAM NT -EMSREB MUMSERMIEM tT (03) 5988-7657 AGREES BS (06) 455-6467 = enn 2 (03) 5388-7681 ACRES ER (0764) 41-1231 me Saeteey mt HAAS ce (03) 5388-7680 masa = (0878) 51-0185 @ 03) 5388-7651 KRSM (0263) 36-6740 PARRA AMR (052) 204-0295 NMS t (03) 5388-7685 AYNALAMRS AMES TD (092) 731-7192 a