2SK1013-01 FUJI
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2SK1 O1 3-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F I SERI ES Features HOutline Drawings ®@High speed switching 2 . oon 45802 © Low on-resistance sux PO = ®@No secondary breakdown A i 2 . 1, \\ ®@ Low driving power Ue} 4 Mf @High voltage 4 @Viss= +30V Guarantee @) @ Avalanche-proof Ci . . 2.2 im | 1.6 % 5 Gore Applications | ! : g:Dran Switching regulators | ‘i U3 o.5t92|| |us 5.45 5.45 UPS woe ®DC-DC converters a © General purpose power amplifier JEDEC a ear | SC ™@ Max. Ratings and Characteristics Wi Equivalent Circuit Schematic @Absolute Maximum Ratings(Tc= 25°C) Items Units Se ~_Drain-source voltage Voss | S50] Continuous drain current | In 13 [A _ Drain(o) _Pulsed drain current | Ioomy | 89 fA Continuous reverse drain current | Ine | A __ Gate-source peak voltage Voss | =30 «| SV Gate(G) Max. power dissipation Pp |___125 wo Operating and storage Ten 1500 | CC Source(S) temperature range Tone =55~+150] °C @Electrical Characteristics(Tc =25°C) ~~ _ Items Symbols [7 Test Conditions | Min. | Typ. | Max. | Units Drain-source breakdown voltage] Vesxss | In=JmA_Ves=0V__ 40 | | Vv Gate threshold voltage Vesam | In=ImA_Vs=Ves ___| 25 35 50 | VO vo gate voltage drain curr Vos=450V Tn=aC [T0500 A Zero gate voltage dr ain current | loss LVvecsov T= DsC [02 Ob omA __ Gate-source leakage current | Toss | Ves=£30V_Vos=0V 10 {100 nA Drain-source on-state resistance | Rnsion Ib=6A_Ves=10V __ 05 | 060; a9 Forward transconductance | _grs | 15=6A__Vos=25V 8.0 Us Input capacitance Cis _| Vos=25V 1400/2100 ___Output capacitance |_ Coss Vos=0V 180 pF Turn-on time toy two | ye _ 30 45 ton + taxon +t) be Ve a n= 13 /—-- 10 hs Turn-off time tor Lewis Ro =250 150 230_ __ Ctaworn tt) __ te “es 90 | 140 Diode forward on-voltage Vsp Tr=2XIpr Ves=0V_ Ten =25°C 1.12 1.5 Vv | We=2Tor Vess0V_ Ten =25°C_| } 15) V Reverse recovery time tn T= Inn G/d=100A/ys Ton = 25°C 500 ns @Thermal Characteristics Items Symbols Test Conditions [ Min. | Typ._| Max. | Units ‘Thermal Resistance Rinen-m | channel to air __ 35.0_[ °C/W man Resistance |_Rinieney | channel to case 10 | C/W A2-91
FUJI POWER MOS-FET 2SK 1013-01 characteristics SSERSERERERRRERSRRER EE CT j an [TI 30/7 Ip=f(Vos:BOus PULSE TEST.Toh=25°C [1 | | | Rosw=t(Tchlo=6AVesstov | | | | | [[ Ves=2ov ov gov zov {t4 * SCT LEFT) COCCI COPECO en 2a Hes POP a e/a He} AH aot + ft ——_| oH so TT Trae oan Bene /aeeeeeamee HELE Eee teed Pen. HE CO eed b H+ 3++—_F Hee (a) Heer eet cro © oe LOCI i Coo @ POA Leese ea SE SEI 5.0. Teer TT) Asc a ReETEE GHEE EREERRERE [Att SSR fff EE HH Vit) TTT ry rrr flO ° 10 20 30 50 ° 50 100 150 VoslV), Tal} Typical Output Characteristics On State Resistance vs. Ten =f(Vbs):80ys PULSE TEST.Vos=25V,Tch=26°C Lie ofa are ea Piya yy | a COCO 1a 20} t STC LTP Tyr rrr ra Ceres LPP ty yer | AS IPCI TPT Pri yr eae [Tt Rosen “OCTET IPP COLL LI CLEC om TT UT Tr rr] lo 19 \\—| (a) a ow FE at See eee 6 OY ee eee Ree 20v COLOUEEEE EEE] a 7 — a Coy EEE EERE EEE EEE EH ° 5 10 ° 10 20 30 Vos(V) WoLA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lo
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oe et “ToT LTT Tyr yyy rr i HW COC Li} PPR eA Pe TT LAT rr Hoty TTT TPES HAR PPPS ee LT OSCE Vewneg os w meL EET Peery ~ (OCU CCE CEP HH PTT POOLE 1 Ocoee eee - COCO erro LL TTT fe) 10 20 30 o 50 100 150 1o(A) TaCC) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ton A2-92
2SK 1013-01 FUJI POWER MOS-FET 500, 20 Clo = soya Co I TTA KCL] oteeiverovtcnes TTT [EE vestoononea Pea | KEE tH AAA oA ess 400 oto 6 ORS SSeS Ly A vos WERE ERE SS RYE GRE) STINGER EEE EEE EEE EE 300 He ve SAE ~228v Fe S60 A tov A SSS aie 4 KI =H SY AO c NI | To Coss eon to AA, [el a ee a YY OF” SEES SSS Vos FE AAAS Ves ARES SSSS ies a a SEE REE EERE ors} ) gg At vee EEE) COE wo ATI ev 4 COOCCEE Ere FAM et easy PN et sev Ho] a oh on A A LU UT Pebe Sea oO 0 25 30 40 ° 40 20 0° VostV} Aginc) Typical Capacitance vs. Vos Typical Input Charge 7 150 Tretivexqye Ti rt tty Cog Too euserest | 4 | | | | | CEE] etre FT
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==s-_—- === ES ow EEE EH Ie SERS a PLE NH a) ete tt bt LNA et LT TTT EERE HEE ° 05 10 Ww ° 50 100 150 Vu(V) TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc Lo oo t= Sian ee ait oe OOO SAH LL I) NUTNios \\ So OE og SESH SS SEH nT a Ere S00 0 |_| EL | Ft reetives) RCE Eos oe [reese TAIT OS et rr ST i | RN TT Re rote on ITT yp we et Ht SSS 0.05 Haas Le Fa LLL SS Co/w) Se H=~o.02 Feat a Coot atti ons| aera 0.01 fi 0.02 itt t Tl Fat CPN Scar orm Der iil Att ot FERS | oe il A il Conn Coon 108 tov4 108 to 1071 10° 10 ot 10? 108 x) VostV) Transient Thermal Impedance Safe Operating Area A2-93
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