2SK1012-01 FUJI
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N-CHANNEL SILICON POWER MOS-FET F Tl SERI ES @ -eatures Outline Drawings ®t igh speed switching _ oe i gaze 45 @ Low on-resistance gx PAN @) 0 secondary breakdown rT @ Low driving power (ey) 4 + igh voltage i @\\iss= £30V Guarantee g 7 TU @ £.valanche-proof 22 YY Hs & 1 gee se Applications i ! Boron @ witching regulators WH ostel lis ous a a @('C-DC converters | © Cieneral purpose power amplifier |_JEDEC | — IAN SC-65 Z M Max. Ratings and Characteristics MEquivalent Circuit Schematic @£bsolute Maximum Ratings(Te= 25°C) _ Ttems Symbols Units Se ~~ Drain-source voltage Voss | 00) OV Continuous drain current To 10 A . Pulsed drain current Trou | 35 «| A ain) ~~ Continuous reverse drain current| Tor - 0 | A ___ Gate-source peak voltage Voss | 80 | OV ~~ Max. power dissipation [Po 100 | WS Gata(c) Operating and storage To 150 | “°C _ _ temperature range Tse —55~ +150] —“C Sourca(S) @ lectrical Characteristics(Te= 25°C) _ : _ Items [ Symbols [Test Conditions | Min. | Typ. | Max. | Units ~_ Drain-source breakdown voltage | Vaswoss | Iv=ImA__Vos=0V 500] __| Vv __ Gate threshold voltage Vesum | In=ImA_Vos= Ves 25 [35 | 50] V . teins casts Vos=500V | Ten = 25°C. 10 500 nA i Zero gate voltage drain current Ios | voe=ov se od | 10 [ma __ Gate-source leakage current | loss |_Vos=£30V__Vos=0V [10 {100 na ___ Drain-source on-state resistance | Rose» | In=5A_Vos=]0V_ | 0.6} 09 | 2 “Forward transconductance | gs | _Iw=5A__Vvs=25V | 40 | 65 | Ss __ Input capacitance Cis | Vs =25V __[ 1200 | 1800 ___ Output capacitance Cos | Vos=0V 160 | 240 | pF ~ Reverse transfer capacitance | Cos { =IMHz | 70} 100 Turn-on time ton tae | ye = 30 | 45 (ton + tavom * te) tr ye Ins l0A | 80 | 120 ns Turn-off time torr tatoin R250 __ |, 160 | 240 ° Mawr) te oe ___ Diode forward on-voltage Vso Te=2XIox Ves=OV Ta =25'C | | 1d! 1S PV __ Reverse recovery time tr Is=Ipx d/h =100A/ps_ Ton = 25°C 500 ns @ ‘hermal Characteristics _ Items Symbols | ____Test Conditions |_-Min. | Typ. | Max. | Units saa Runen-»» | channel to air ___t 35.0_| -C/W_ _ Thermal Resistance Rinen-c) | channel to case [| —- 1.25_| °C/W A2-88
2SK 1012-01 FUJI POWER MOS-FET 28K Tone ON FT POWER MOS-FET MCharacteristics EEF ve poten: 6oys a4 ane So EES A 4 oa 1 eee) A ax, tA 4 Oe. {| He +4 [Tt anny an I e/a Lo Seeee eee ene LETT y A CO er a Ce FS o.0) PE ee fea ya ieee im lo ly A A Rosom Tp TT Try a 2 Cer ea ve a) RRR RSS Sse @ FEE ee oe 6 7-H 0. ree Te) $ A i a sor} “EEE AEH) Tree rr i eee LOC f= | 4 ASS BEERS EeEEEEEEE ai (EEE EH ie) 10 20 30 -50 ° 50 100 150 VoslVJ To (°C) Typical Output Characteristics On State Resistance vs. Ter = T ,Vos=25V se Seo “AE FR RSA es, Eo a | tp He EES HEHE EE saesas saeeanaeens| Hee HESEH ES o a iA Tt CREECH tam ee es mo PRR ©), acme 80% EEE HAECEECECHH epee FE j-——} 4 tf ee Ee EEE ° Cea ° 5 e Vos(V) ° ICA) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. lp LH ecto sen FF CL] [eames [| wrest ees | A eH oeeeeeeeeeee DOLCE | [| ROCCE pa POCSSRREE ke Cee 30 ee COSCO COCCCC ess) +4 eo CASSEL fm 1 « vow “COC PLLLL LEELA Me) Coo ® Feo HEH SCcececee eee HEEEEEE EEE EH Cocco eee} ICA) ToC) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Ten A2-89
FUJI POWER MOS-FET 2SK 1012-01 a a) Soo a 7 2 HEE Hi cstenianoistie PEP e EE acrepen A tL rit { ey PORE AA 7 aoc ts [| EY vos—| IEE TAS Mes cr a == A Bea cov | He eA Prt | so Ftp esov Ee sR ear es Pr AA 1oov =] c WE [CoE a 7 or! CaF) tite U cog HA ~ Prt Sess A OAS View i - Ve Pye other bo = pj} Lt Ww) pf ves =, [ESSE ores oor SY aoov Ee Sacstezins a Ate ey HERES TI CI TPE 100v FH HEE EEEEEE Fa SERS ° rs 20 30 ° a0 30 20 Vos(V) Qg (nC) Typical Capacitance vs. Vos Typical Input Charge IT Te=Hevsoneops pulse test} TTT NG T rea u petro) oS tf 80) rey === eS —— apt | | PSS SSSoSor Sore | = = _ Vt i N f_Ton=28°C typ. L r if | Po ag i: |. beef ian om ENT a =====s=5====) LE INT 5 } — 4 20 Ni Begcesccteaar ELLE EES Ci | A EAN
5 Os 10 ° 30 709 750
VeolV) TCC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc N Fro eae iene eee ORAS SEE N= Serr oo SWE Hie sety Fis = Fe 02 Fee errr teed x KIL Sees etal i eel ARN ro eC, Seats eh | ont Feat i Se cow Eefoor eos Hh FA Froth H HH <H so" hse Hi it aS ele COT IIE TE) i ins 105 10-4 10% 10? 1 10° 10" 10! 102 ro 1(S) Vos(V) Transient Thermal Impedance Safe Operating Area A2-90
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