2SK1010-01 FUJI
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2S K1 01 0-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F tt SERI ES Features Outline Drawings @ High speed switching -_ | @ low on-resistance | spit @ 10 secondary breakdown eae aa se | @1.ow driving power Pst |
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®@ High voltage r | Fy @\\/oss= +30V Guarantee lobe / © Avalanche-proof ih. 2 A Applications oH. 2 eae vy . 3: Source @ Switching regulators , | eups ose | | out 2 @()C-DC converters _ @ (General purpose power amplifier JEDEC _ TO-220AB _| EIAL SC-46 | MMax. Ratings and Characteristics MEquivalent Circuit Schematic @,\\bsolute Maximum Ratings(Tc= 25°C) _ Items Symbols Units -— or — Drain-source voltage Vos | 500) SV “Continuous drain current b | 6 A branto) Pulsed drain current | Inoue is | A, __ Continuous reverse drain current] Toe | 6 A ™ Gate-source peak voltage | Voss =30 Vv __. Max. power dissipation Po | 80 |W Gate(G) Operating and storage [To 150 C __ temperature range Toe =55~ +150| °C Source(s) @lectrical Characteristics(Te=25°C) ~~ — _ {tems Symbols [Test Conditions | Min. | Typ. | Max. | Units __ Drain-source breakdown voltage [ Veomss | Io=ImA_Ves=0V a Vv __ Gate threshold voltage Vesan | Ie=1mA__Vos=Vos 25 50 | Vv nie wy a Vs =500V Tn=25C | | 10 | 500 vA _ Zero gate voltage drain current [es Vee=0V Tense [ToL 10 [ma __ Gate-source leakage current_| Toss Voes=+30V__Vos=0V. _ 100 | nA ___ Drain-source on-state resistance | Rosia, | In=3A__Vos=10V. 16 | 0 “Forward transconductance | gis Ip=3A__Vos=25V [40 | __s __ Input capacitance Ciss Vos =25V [| 700 1000 __ Output capacitance: | Cos | Vos=0V 100 | 150 | pF ~~ Reverse transfer capacitance [ Cs ___| ff =IMHz 5 6 | Turn-on time to, teow | ye _ 20 30 (ton toon tte) a Vee=300V Te=6A [507 [80 Turn-off time ton twa | Re ogg 30 | 120 _-_Maorn +t) te ae _ 50_ | 80 Diode forward on-voltage | Vso | ‘dn=2XTor Ves=0V_ Ten=25°C 1.0 15 [| V ~ Reverse recovery time tr Te=Ion d/h =100A/us Ten =25°C ns @“hermal Characteristics a items Symbols | ___Test Conditions | Min. | Typ. | Max. | Units Thermal Resistance Ruwn-»)__{_channel to air [ie | cv _ : Rincen-er | channel to case 1.56_| °C/W A2-82
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