2SK1008-01 FUJI
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a. K1 008-01 FUJI POWER MOS-FET a N-CHANNEL SILICON POWER MOS-FET F Il Ss E RI ES @ Features MOutline Drawings @\\4igh speed switching @|.ow on-resistance agine @|\\lo0 secondary breakdown e368 ott 5 + 3 ®|.ow driving power Pact 7 D432 @ igh voltage Pe Fy @'/sss= +30V Guarantee loball © Avalanche-proof i" 4 | or ose i Iffi2 al 1 Gore ® Applications thy 2 Sh © Switchi lators | : ning regulat ad Lose ot ler @ DC-DC converters a @ General purpose power amplifier JEDEC TO-220AB “EAN SC-46 BiMax. Ratings and Characteristics MEquivalent Circuit Schematic @ Absolute Maximum Ratings(Tc= 25°C) _ Items [ Symbols | Ratings | Units co ~ Drain-source voltage Voss | 500 V — Continuous drain current | 45 [A Drain(o) — Pulsed drain current [Joos | 12 «| A : ~ Continuous reverse drain current |"Tor 45 A ~ Gate-source peak voltage Vess | +30 =| V ~ Max. power dissipation Po 60 Ww Gatets) Operating and storage Ten 150 °c Source(S) __ temperature range Tag —55~+150| °C @ Electrical Characteristics(Tc= 25°C) i = Items [ Symbols | __Test Conditions| Min. | Typ. | Max. [ Units ~ “Drain-source breakdown voltage | Viswnss | Io=ImA_Ves=0V 500 Lv ~ Gate threshold voltage Ves» | Io=ImA_Vos=Ves 25 35 50 | V , a Vs =500V Ten =25°C 10 _|_500 uA _2eto gate voltage drain current | Tos Vo=ov T=ise 00 10 [mA — Gate-source leakage current | Toss ___|_Ves=£30V__Vos=0V 100__| nA ~Drain-source on-state resistance | Rosom | In=25A Ves=10V 1s| 22] a ___Forward transconductance |g | _In=2.5A_Vos=25V. 15 3.0 s “Input capacitance | Cass Vos=25V [| 500 750 __ Output capacitance Cos | Vos =0V [| 70 | 100 pF __Reverse transfer capacitance | Criss £ =IMHz [| 30 45 _ Turn-on time ton favour _ _ | ee Ce ee tonto ts) ti a vere W=45A Co fo, Turn-off time tor: tain R.n250 80__| 120 ° ___ ktayoon tte) t | _ | 50 80 ~ “Diode forward on-voltage | Vso | In=2X lon Vos=0V_ Ton=25'C 10 rs / Vv _ Reverse recovery time tee Te=Tox di/de=100A/us Ten = 25°C 300 ns @ Thermal Characteristics = Items [ Symbols [Test Conditions| ‘Min. | Typ. [ Max. | Units Tota. Rinen-a)__| channel to air _ : 75.0_|_-C/W _Thermal Resistance Rinen-e | channel to case +—t—_| 2.08 | -c/W A2-76
2SK 1008-01 FUJI POWER MOS-FET Characteristics PULSE TEST, Te=25'C » HH ey yeaa CORee errr er] aL Ae 6 EEC ooo Cor eee SSSS0 70008005 50S050808 f ) Pee oLLU ATT SSRR8 60 SSSR SESRERRED Ze anny 4a Prt eee 4° Resow & > PH ea oy AH COCCER Ce eer na sb bow. @ ee TTT COCO pet «per eH eee > JAAR SE Colbert. COT jy ausieebessbueea stesasrifaatnserernees ATi TTT » COO ° 0 20 i) $0 is) 60 100 60 VosV) Tan(C) Typical Output Characteristics On State Resistance vs. Teh A Tomtives):8Qy PUse TEST i » ob festeni ad peers ow LT HA LAH EE See ee a LTP SRR eee IP COE CCe cee Pe a » sL) TTy LIT Se eee @ OTT ew CI a | ae | | LET yr A LTT TT yyy IPP ry LETT ATT TTT Ty LIT TTT Perr ° . Vert) ° . 1eCAy Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. Io fp ease ete TTT A . SSSS00 50000058 ey COP of ED aoe poe | “Ee COC eo occ wf He TT COOPTECECE Ke TPR ro Ce eq LEE Te fs eAH EEE vom LET TTT) TT PERE S) CECE EEE EEE wt LEPT TTT TTT] A LP COCO CETTE TPP ° 5 10 ie) 50 100 150 lolA) Tes('C) Typical Forward Transconductance vs. lo Gate Threshold Voltage vs. Toh A2-77
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i ° 0 20 30 ° 20 40 60 ° Vos(V) Qg (nc) Typical Capacitance vs. Vos Typical Input Charge FH _ “TTT [TTT TT J F=1(Vsp):80ys PULSE TEST No — I COON Eee wl LEE ETT + COON oo | === dt N ETT a Coe CCCCLee A SA . Hoe Cr LL MSCCOCLo Het Hy » PN RRREEY i ® COC @) FREES LETT TTT TN a PITT TT TTT TTT nN LET TTT Te Pert) LITT tT Try yy Trt N ° 05 10 ° 50 100 150 Vso(V) T.CC) Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc Sa > Se HEH SS el FSSC HHH Be Chi NERS ON 0° 2S Eee UTI TTT Ci NAOT PH eer — , SS ety Carat ame TTI mn A SH ns | cow “eee LIE SLL a Bo SSS So! SS |: Hi Eps srtiSSoos et [| ot SHH Ui bh | IT NA rt [0.02 [tI Con il i HE TNT 102 [I UNI TT | o N ws 10-4 wo 107% 8) 107 wo? 10! 0 we Vet) fold tl Fs Transient Thermal Impe dance Safe Operating Area A2-78
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