2SK1007-01 FUJI

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2SK1 007 -O1 FUJI POWER MOS-FET ee N-CHANNEL SILICON POWER MOS-FET F Il S E RI ES MIF 2atures HOutline Drawings @Hicih speed switching oO a ~ @ Low on-resistance @No secondary breakdown sett wy) a8 tx ® Low driving power alt TO @ High voltage Pit 4 @V..5=+30V Guarantee loos do @ Avalanche-proof Wey Applications ol | J zw al | 4 te © Switching regulators oo | * Sense eUFS 254 254 oot | a2 DC -DC converters © General purpose power amplifier TO-220AB EID SC-46 MiMViax. Ratings and Characteristics MEquivalent Circuit Schematic @Ab solute Maximum Ratings(Tc=25'C) Items Ratings | Units ~__D:ain-source voltage Voss [450 | Vv Cuntinuous drain current b | 5 | A Drain() Pulsed drain current [Too | 4A ___Céntinuous reverse drain current] Inn | SYA Gite-source peak voltage Voss +30 | - Gate(G) Max, power dissipation Pp a) Ww Operating and storage |_Ten 1 150 | °C Source(S) te nperature range Tag =55~ +150] °C @E€lectrical Characteristics(Te= 25°C) Items | Symbols | ____ Test Conditions [| Min. | Typ. | Max. | Units __.Drain-source breakdown voltage | Virwss | In=ImA_Ves=0V. |_450 | Vv __ Gite threshold voltage Vesun | Ib=ImA_Vos=Vos_ |S 35|. 50, V . Vs=450V Tn =25C 10 | 500 | yA Ze:o gate volta re > 7 a __ee ante voltage drain eurrent | Toss | Vs 0V T1250 | 10 [mA __Gite-source leakage current_| “Tess | Vos=+30V_Vos=0V | [30 | 100 “| nA ___Drain-source on-state resistance | Rosion | b=25A Vos=10V ll 16/ 2 — Forward transconductance _|_ gw | Tn =2.5A_Vos=25V 30{ |S Input. capacitance | Cin | Vv =25V 500_| 750 __Ov tput capacitance Coss | Ves =0V 70 100 pF Reverse transfer capacitance | (Cys | of =IMHe 0 Tumn-on time ton tao ty a 10 15, cape tlnttuon tt) ee) Yee Tem — 50) 8 Trrn-off time tor tao |p non | 80 | 120 —Dirde forward on-voltage | Ven | Te=2xTon Ves=0V_Te=asC [To | 5 |v Reverse recovery time tr fr=Ix d/d=100A/ys Ten=25C | | 300 | | ns @Thermal Characteristics items [ Symbols | __Test Conditions —|_‘Min. | Typ. | Max. | Units Trermal Resistance Roxen | channel toair [| 75.0 | *CAW “ee Royen-c | channel to case [| 2.08 | c/w A2-73

FUJI POWER MOS-FET 2SK 1007-01 MiCharacteristics 10) Whoztaosr k al ey get | TT | TT pov ots Sie? cece FECES ERE EE EEE Ea CoA “HERE per 6 oe EEC ore ee ny Gunes Cece eee | ACCC ear an) Ge Resow @CCE CECE EERE ee oo 4 b CeCccoc cre eo LEAT CoCo ere © oe Keeper a VERE eee eee 2% > ) ABR EPC Ra ESTEEISEaseeeeseeenas VILLI TTT TT Tie) EEE EEE ° ae 20 30 50 ° 50 100 150 VosV) Tenl*C) Typical Output Characteristics On State Resistance vs. Tch jos=25V. Toh=25" Ves= LTPP TTP yyy [|] “LSevssvsov, esv rovrsv | | | otter yy ee eee LTT PTT rrr yr yy es ee Litt Try ee [TTT TTT rrr yy ee ee LT TTT) TAT TTT ry rom PHT lo tite [TTT oo i w Cee @ JU LTT TT TAT TTT COAT ey TI PEE Pees LITT TTT TTT rr) LETT TTT TTT TT ry) ° 5 10 °O 2 4 6 8 10 1 4 VostV) (A) Typical Transfer Characteristics Typical Drain-Source on State Resistance vs. Ip afs=fl aE 8Qys PULSE TEST, Vos=2v. Ton=25°C . eee eee a . EO LL ree] Hh COC vg rr | COPE “HOTT TH L{ ft tery Poet (Oe EEE oe TT COREE Er LETT TTT PP Fey TY COZ eo PERE Te TTT od PTT vee LETT Pra o Ao m ol POH PCeCeocrce LETT TTT COC LUTE TTT TTT} oO 8 Le) ° 50 100 150 ~ fa) ToC) Typical Forward Transconductance vs. |p Gate Threshold Voltage vs. Teh A2-74

2SK 1007-01 FUJI POWER MOS-FET WCharacteristics 500, W777 20 LLL eerie TTT LH wrannonse LAT TT | | } L | Vos Ve Moor [| NPE) al | AAS 380N ‘aa Re =H HP be | AUT 4 ot \\ Sirens cose | ot YA tt cS we ECDC SECT oes wedA twee LETTE, PeCeece eee cere se ne Vwi— sov ALTE Sere a a Dsso eo, Vos(V3 Qg{nc) Typical Capacitance vs. Vos Typical Input Charge oo 7 SN SHSHERREAAAUEL PEEP Nee EEE ———— a oo oo oo oo oo A \\ Se “TTCCCPTNE TTT a A HS A { ee PTT, T TTT K [| ees ne. [TTT TTT Try im LETT i || rod PTT TTT PN TTT MY SSSSSSSSSSSSS wep AE oo SERRE RRR EEES lL a Seeeseeeeeeean Li TTT TTT tty tN | ET iT ETe iT TTT LETT TT TTT yt Tt en ° “6 ve) ° atc me Forward Characteristics of Reverse Diode Allowable Power Dissipation vs. Tc ys |_| oRSEEe Mise \\ Eee SS Ra E02 Hee ee eee = sy eb tN _——| erm sae ana ee aa » WE Se? Re =a ee ee Pon To=25°C CAS SE cow) o ERE : JLIL UT “ SLSIL PSS ome ES to0s Feri | o-+ Erte 7 NAT ro [__} 0.02 [rrr] Ct D=> N etl uu in CTI mailill , ei os 10-4 o> 107? 8) 107 10° 10" or 0 ; 108 tl Vos(V) Transient Thermal Impedance Safe Operating Area A2-75

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