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Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET For switching I Features GHigh-speed switching GM type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings ±100 ±200 400 150 −55 to +150 Unit V V mA mA mW I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω * ton, toff measurement circuit min 1.5 typ Unit µA µA V V Ω mS pF pF pF ns ns max 3.5 1.2 Vout VDD = 5VVGS = 5V 50Ω 200Ω100µF Vin 90% 10% 10% 90% Vout ton toff Internal Connection G D S 1: Source 2: Drain 3: Gate EIAJ: SC-71 6.9±0.1 2.5±0.1 (1.0) (1.0) (1.5) (0.85) 0.45±0.05 0.55±0.1 (2.5)(2.5) 231 R 0.7 R 0.9 (0.4) 3.5±0.1 4.5±0.14.1±0.2 2.4±0.21.25±0.05 2.0±0.2 1.0±0.1 (1.5) Note) The part number in the parenthesis shows conventional part number. Unit: mm
Silicon MOS FETs (Small Signal) PD Ta I D VDS | Yfs | VGS Ciss, Coss, Crss VDS ID VGS RDS(on) VGS VIN IO 2SK0657 0 160 40 120 80 14020 100 60 0.7 0.6 0.2 0.5 0.4 0.1 0.3 Ambient temperature Ta (˚C) Allowable power dissipation PD (W) 01 2 10826 4 120 100 VGS=6.0V 5.5V 5.0V 4.5V 3.5V 2.5V 3.0V 4.0V Ta=25˚C Drain to source voltage VDS (V) Drain current ID (mA) 01 2 10826 4 VDS=5V Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS) 1 3 10 30 100 VGS=0 f=1MHz Ta=25˚C Ciss Coss Crss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 01 2 10826 4 120 100 Ta=–25˚C 25˚C 75˚C VDS=5V Ta=25˚C Gate to source voltage VGS (V) Drain current ID (mA) 01 2 10826 4 120 100 ID=20mA Ta=75˚C 25˚C –25˚C Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (Ω) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3 100 VO=5V Ta=25˚C Output current IO (mA) Input voltage VIN (V)
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