2SK0656 PANASONIC
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Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching I Features GHigh-speed switching GSmall drive current owing to high input inpedance GHigh electrostatic breakdown voltage Internal Connection G D S 1: Source 2: Drain 3: Gate 4.0±0.2 0.75 max. 2.0±0.2 0.45 (2.5) (2.5) 0.7±0.1 231 +0.20 –0.10 0.45+0.20 –0.10 7.6 3.0±0.2 (0.8)(0.8) 15.6±0.5 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 100 200 200 150 −55 to +150 Unit V V mA mA mW I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + R2*1 Ciss Coss Crss ton*2 toff*2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200Ω VDD = 5V, VGS = 5V, RL = 200Ω VDS = 10V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω *1 Resistance ratio R 1/R2 = 1/50 *2 Pulse measurement min 1.5 4.5 100 typ 4.5 1.1 Unit µA µA V V Ω mS V V kΩ pF pF pF µs µs max 3.5 200 Note) The part number in the parenthesis shows conventional part number. unit: mm
Silicon MOS FETs (Small Signal) PD Ta I D VDS ID VGS | Yfs | VGS Ciss, Coss VDS RDS(on) VGS IO VIN VIN IO 2SK0656 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW) 01 0 826 4 120 100 Ta=25˚C 5.5V 5.0V 4.0V 3.0V 4.5V 3.5V VGS=6.0V Drain to source voltage VDS (V) Drain current ID (mA) 01 0 826 4 120 100 VDS=5V Ta=–25˚C 25˚C 75˚C Gate to source voltage VGS (V) Drain current ID (mA) 01 0 826 4 VDS=5V Ta=25˚C Gate to source voltage VGS (V) Forward transfer admittance |Yfs| (mS) 0.1 1 10 1000.3 3 30 VGS=0 f=1MHz Ta=25˚C C iss Coss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 01 0 826 4 120 100 Ta=75˚C 25˚C –25˚C ID=20mA Gate to source voltage VGS (V) Drain to source ON-resistance RDS(on) (Ω) 05 413 2 0.001 0.003 0.01 0.03 0.1 0.3
10 VO=5V
Ta=25˚C Input voltage VIN (V) Output current IO (mA) 0.1 1 10 1000.3 3 30 0.1 0.3 100 300
1000 VO=1V
Ta=25˚C Output current IO (mA) Input voltage VIN (V)
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