2SJ687-ZK-E2-AY

2SJ687 NEC

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DATA SHEET Document No. D18719EJ2V0DS00 (2nd edition) Date Published May 2007 NS Printed in Japan 2007 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.

FEATURES

• Low on-state resistance R DS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) R DS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A)
• 2.5 V drive available
• Avalanche capability ratings

ORDERING INFORMATION

PART NUMBER LEAD PLATING PACKING PACKAGE 2SJ687-ZK-E1-AY Note 2SJ687-ZK-E2-AY Note Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS −20 V Gate to Source Voltage (VDS = 0 V) V GSS m12 V Drain Current (DC) (TC = 25°C) I D(DC) m20 A Drain Current (pulse) Note1 ID(pulse) m60 A Total Power Dissipation (TC = 25°C) PT1 36 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note2 IAS −20 A Single Avalanche Energy Note2 EAS 40 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V (TO-252)

Data Sheet D18719EJ2V0DS 2 2SJ687 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = −20 V, VGS = 0 V −10 μA Gate Leakage Current I GSS V GS = m12 V, VDS = 0 V m100 nA Gate to Source Cut-off Voltage V GS(off) V DS = −10 V, ID = −1 mA −0.6 −1.2 −1.45 V Forward Transfer Admittance Note | yfs | V DS = −10 V, ID = −10 A 20 S Drain to Source On-state Resistance Note RDS(on)1 V GS = −4.5 V, ID = −10 A 5.4 7.0 m Ω R DS(on)2 V GS = −3.0 V, ID = −10 A 7.1 9.0 m Ω R DS(on)3 V GS = −2.5 V, ID = −10 A 10.8 20 m Ω Input Capacitance C iss V DS = −10 V, 4400 pF Output Capacitance C oss V GS = 0 V, 1070 pF Reverse Transfer Capacitance C rss f = 1 MHz 760 pF Turn-on Delay Time t d(on) V DD = −10 V, ID = −10 A, 36 ns Rise Time t r V GS = −4.5 V, 220 ns Turn-off Delay Time t d(off) R G = 3 Ω 270 ns Fall Time t f 310 ns Total Gate Charge Q G V DD = −16 V, 57 nC Gate to Source Charge Q GS V GS = −4.5 V, 12 nC Gate to Drain Charge Q GD I D = −20 A 28 nC Body Diode Forward Voltage Note VF(S-D) I F = −20 A, VGS = 0 V 0.85 1.5 V Reverse Recovery Time t rr I F = −20 A, VGS = 0 V, 200 ns Reverse Recovery Charge Q rr di/dt = −100 A/μs 240 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω L VDD VGS = −12 → 0 V BVDSSIAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG VGS(−) D.U.T. RL VDD τ = 1 sμ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS(−) 10% 90%VGS 10%0 VDS(−) 90%90% td(on) tr td(off) t f 10% τ VDS ton toff PG. PG. 50 Ω D.U.T. RL VDD IG = −2 mA <R> <R>

Data Sheet D18719EJ2V0DS 3 2SJ687 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 Tch - Channel Temperature - °C PT - Total Power Dissipation - W 0 25 50 75 100 125 150 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A -0.1 -10 -100 -1000 -0.1 -1 -10 -100 PW = 1 ms 10 ms ID(pulse) ID(DC) RDS(on) Limited (VGS = −4.5 V) TC = 25°C Single Pulse Power Dissipation Limited VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Rth(ch-A) = 125°C/Wi Rth(ch-C) = 3.47°C/Wi Single Pulse PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000

Data Sheet D18719EJ2V0DS 4 2SJ687 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A -20 -40 -60 0- 1 - 2 - 3 VGS = −4.5 V −2.5 V Pulsed VDS - Drain to Source Voltage - V ID - Drain Current - A -0.0001 -0.001 -0.01 -0.1 -10 -100 0 - 1- 2- 3 VDS = −10 V Pulsed Tch = −55°C −25°C 25°C 75°C 125°C 150°C V GS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) – Gate to Source Cut-off Voltage - V -0.5 -1.5 -75 -25 25 75 125 175 VDS = −10 V ID = −1 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.01 0.1 100 VDS = −10 V Pulsed Tch = −55°C −25°C 25°C 75°C 125°C 150°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 0- 5 - 1 0 - 1 5 ID = −10 A Pulsed VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ -0.1 -1 -10 -100 VGS = −2.5 V −4.5 V Pulsed ID - Drain Current - A <R>

Data Sheet D18719EJ2V0DS 5 2SJ687 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -75 -25 25 75 125 175 ID = −10 A Pulsed VGS = −2.5 V −4.5 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 VGS = 0 V f = 1 MHz Crss Ciss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 -0.1 -1 -10 -100 VDD = −10 V VGS = −4.5 V RG = 3 Ω td(on) tr td(off) tf ID - Drain Current - A VDS - Drain to Source Voltage - V -10 -15 -20 -25 0 1 02 03 04 05 06 0 VDS VGS ID = −20 A VDD = −16 V −10 V −4 V Q G - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A -0.01 -0.1 -10 -100 -1.5-1-0.50 Pulsed −4.5 V −2.5 V VGS = 0 V VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 1000 10000 -0.1 -1 -10 -100 di/dt = −100 A/μs VGS = 0 V IF - Diode Forward Current - A

Data Sheet D18719EJ2V0DS 6 2SJ687 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A -10 -100 0.01 0.1 1 10 Starting Tch = 25°C VDD = −10 V RG = 25 Ω VGS = −12 → 0 V IAS = −20 A EAS = 40 mJ L - Inductive Load - mH Energy Derating Factor - % 0 100 120 25 50 75 100 125 150 VDD = −10 V RG = 25 Ω VGS = −12 → 0 V IAS ≤ −20 A Starting Tch - Starting Channel Temperature - °C

Data Sheet D18719EJ2V0DS 7 2SJ687 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 6.5±0.2 2.3±0.1 0.5±0.1 0.76±0.12 0 to 0.25 0.5±0.1 1.0 No Plating No Plating 5.1 TYP. 1.0 TYP.6.1±0.2 0.51 MIN. 4.0 MIN.0.8 10.4 MAX. (9.8 TYP.) 4.3 MIN. 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body DiodeGate Drain Remark Strong electric field, when exposed to this device , can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

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