2SJ670

2SJ670 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -1.5 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -6 A Allowable Power Dissipation P D Mounted on a ceramic board (600mm25 0.8mm) 1.5 W Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -100 V Zero-Gate Voltage Drain Current I DSS VDS =- -100V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -0.8A 1.3 2.3 S R DS (on)1 I D =- -0.8A, VGS =- -10V 410 535 m ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =- -0.8A, VGS =- -4V 530 745 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 535 pF Output Capacitance Coss V DS =- -20V, f=1MHz 43 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 31 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 9 ns Rise Time t r See specified Test Circuit. 4.5 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 62 ns Fall Time t f See specified Test Circuit. 34 ns Marking : NA Continued on next page.

No.8354-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =- -50V, VGS =- -10V, ID =- -1.5A 11 nC Gate-to-Source Charge Qgs V DS =- -50V, VGS =- -10V, ID =- -1.5A 2.6 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -50V, VGS =- -10V, ID =- -1.5A 2 nC Diode Forward Voltage V SD IS=- -1.5A, VGS =0V - -0.83 - -1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-003 1 : Gate 2 : Drain 3 : Source SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --0.8A R L=62.5Ω VDD = --50V VOUT 2SJ670 VIN --10V VIN ID -- VDS ID -- VGS --2.0 --2.5 --0.5 --3.0 --0.2 --0.4 --0.6 --1.5 --1.0 --1 --2 --6 --4 --5 --3 IT06017 IT06018 V GS = --3.0V --3.5V --10V --6.0V Tc=25 --25 °C75 V DS = --10V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A

No.8354-3/4 --1.0 --10 --0.1 --0.01 23 5 7 23 5 7 23 5 7 2--0.1 --1.0 --10 --100 IT09792 IT06022 --0.01 --0.1 --1.0 --10 --1 --2 --3 --4 --5 --6 --7 --8 12428 1 0 6 --10 --9 IT09791 IT06021 0.1 1.0 100 1.0 tf IT09790 --5 100 1000 IT06024 V DS = --10V --25 75°CTc=25 Tc=75 --25 V GS =0V V DD = --50V V GS = --10V td(on) td(off) tr f=1MHz Crss Coss Ciss V DS = --50V ID = --1.5A PW ≤10µs 100 µs 1ms 10ms 100msDC operation Operation in this area is limited by RDS (on). 400 500 600 700 750 350 450 550 650 800 300 300 400 500 600 700 800 200 --14 --20--16 --18 IT09788 IT09789 - -60 - -40 - -20 20 40 60 80 1000 120 140 Tc=25°C ID = --0.8A 750 250 350 450 550 650 ID= --0.8A, V GS = --4V ID= --0.8A, V GS = --10V ID = --1.5A IDP = --6A VGS -- Qg A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V yfs -- ID IS -- VSD SW Time -- ID Ciss, Coss, Crss -- VDS R DS (on) -- VGS R DS (on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF

No.8354-4/4 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Note on usage : Since the 2SJ670 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. PS Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Tamperature, Tc -- °C Allowable Power Dissipation, PD -- W PD -- Ta P D -- Tc 20 40 0.2 0.4 0.6 80 100 120 0.8 1.0 1.2 1.6 1.5 1.4 140 160 IT09793 20 40 60 80 100 120 3.0 2.0 1.0 4.0 2.5 1.5 0.5 3.5 140 160 IT09794 Mounted on a ceramic board (600mm 250.8mm) This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice.