2SJ661_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 9

Technical content

Features

  • ON-resistance R DS(on)1=29.5mΩ(typ.) • Input capacitance Ciss=4360pF (typ.)
  • 4V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -38 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -152 A Allowable Power Dissipation P D 1.65 W Tc=25°C 65 W Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7537-001 7535-001

53012 TKIM/N1805QA MSIM TB-00001078

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network 2SJ661-1E 2SJ661-DL-1E Product & Package Information

  • Package : TO-262-3L • Package : TO-263-2L
  • JEITA, JEDEC : TO-262 • JEITA, JEDEC : SC-83, TO-263
  • Minimum Packing Quantity : 50pcs./magazine • Minimum Packing Quantity : 800pcs./reel Marking Packing Type : DL Electrical Connection

No.8586-2/9 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 250 mJ Avalanche Current *2 I AV - -38 A Note : *1 VDD=- -30V , L=200μH, IAV=- -38A (Fig.1) *2 L≤200μH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -60 V Zero-Gate Voltage Drain Current I DSS V DS=- -60V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -19A 18 31 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=- -19A, VGS=- -10V 29.5 39 m Ω RDS(on)2 I D=- -19A, VGS=- -4V 40 56 m Ω Input Capacitance Ciss VDS=- -20V, f=1MHz 4360 pF Output Capacitance Coss 470 pF Reverse Transfer Capacitance Crss 335 pF Turn-ON Delay Time td(on) See Fig.2 33 ns Rise Time tr 285 ns Turn-OFF Delay Time td(off) 295 ns Fall Time tf 195 ns Total Gate Charge Qg VDS=- -30V, VGS=- -10V, ID=- -38A 80 nC Gate-to-Source Charge Qgs 15 nC Gate-to-Drain “Miller” Charge Qgd 12 nC Diode Forward Voltage VSD IS=- -38A, VGS=0V - -1.0 - -1.2 V Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SJ661-1E TO-262-3L 50pcs./magazine Pb Free 2SJ661-DL-1E TO-263-2L 800pcs./reel ≥50Ω 50Ω RG --10V VDD L 2SJ661 D.C.≤1% PW=10μs P. G 50Ω G S D ID= --19A RL=1.58Ω VDD= --30V VOUT 2SJ661 VIN --10V VIN

No.8586-3/9 ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A --10 --20 --30 --40 --50 --60 --70 --80 --10 --20 --30 --40 --50 --60 --70 --80 IT08748 IT08749 VGS= --3V --4V --6V --10V Tc=25°C 25°C --25 Tc= --25 °C 75 Tc=75 VDS= --10V RDS(on) -- VGS RDS(on) -- Tc Ciss, Coss, Crss -- VDS IS -- VSD SW Time -- ID Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A 100 1000 10000 --0.1 235 7 --1.0 235 7 --10 235 7 --100 100 1000 IT08750 IT08751 IT08755 IT08753IT08752 ID= --19A Tc=75°C 25°C --25°C ID= --19A, V GS= --4V ID= --19A, V GS= --10V f=1MHz Coss Ciss Crss IT08754 td(off) tf td(on) tr VDD= --30V VGS= --10V 1.0 100 --0.01 --0.1 --1.0 --10 --100 --1.0 --1023 5 7--0.1 23 5 7 --10023 5 7 Tc= --25 75°C 25°C VDS= --10V Tc=75 --25 VGS=0V | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No.8586-4/9 A S OVGS -- Qg Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A IT08756 0 1 02 03 04 05 06 07 08 0 --2 --4 --6 --8 --9 --1 --3 --5 --7 --10 VDS= --30V ID= --38A IT16831 --0.1 --1.0 --10 --100 --1.0 --1023 5 7--0.1 23 5 7 --10023 5 7 IDP= --152A(PW≤10μs) ID= --38A 100 μs 1ms 10ms 100msDC operation Operation in this area is limited by RDS(on). 10μs Tc=25°C Single pulse PD -- TcPD -- Ta Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W IT08758 20 40 60 80 100 120 140 160 IT08735 20 40 60 80 100 120 1.65 140 160 0.5 1.0 1.5 2.0

No.8586-5/9 Taping Specifi cation 2SJ661-DL-1E

No.8586-6/9 Outline Drawing Land Pattern Example 2SJ661-DL-1E Mass (g) Unit 1.5 * For reference mm Unit: mm

No.8586-7/9 Magazine Specifi cation 2SJ661-1E

No.8586-8/9 Outline Drawing 2SJ661-1E Mass (g) Unit 1.6 * For reference mm

PS No.8586-9/9 This catalog provides information as of May, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SJ661 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.