2SJ660 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
- Low ON-resistance.
- Ultrahigh-speed switching.
- 4V drive.
- Motor drive, DC / DC converter.
- Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -26 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -104 A Allowable Power Dissipation P D 1.65 W Tc=25°C5 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 115 mJ Avalanche Current *2 I AV - -26 A Note :*1 VDD =30V , L=200µH, IAV =- -26A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -13A 11 19 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -13A, VGS =- -10V 46 60 m Ω R DS (on)2 I D =- -13A, VGS =- -4V 67 94 m Ω Marking : J660 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N1805QA MSIM TB-00001077 2SJ660 P-Channel Silicon MOSFET General-Purpose Switching Device
Applications
No.8585-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =- -20V, f=1MHz 2200 pF Output Capacitance Coss V DS =- -20V, f=1MHz 220 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 165 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 18 ns Rise Time t r See specified Test Circuit. 150 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 180 ns Fall Time t f See specified Test Circuit. 130 ns Total Gate Charge Qg V DS =- -30V, VGS =- -10V, ID =- -26A 45 nC Gate-to-Source Charge Qgs V DS =- -30V, VGS =- -10V, ID =- -26A 7.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -30V, VGS =- -10V, ID =- -26A 9 nC Diode Forward Voltage V SD IS=- -26A, VGS =0V - -0.98 - -1.2 V Package Dimensions Package Dimensions unit : mm unit : mm 7513-002 7001-003 Switching Time Test Circuit Avalanche Resistance Test Circuit 10.2 8.811.0 2.7 11.5(9.4) 20.9 1.6 0.2 1.3 4.5 0.8 0.4 123 2.552.55 1.2 1 : Gate 2 : Drain 3 : Source SANYO : SMP PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --13A R L=2.3Ω VDD = --30V VOUT 2SJ660 VIN --10V VIN 50Ω0V --10V ‡50Ω RG DUT VDD L 10.2 8.8 1.5MAX2.7 9.93.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.552.55 0 to 0.3 12 3 2.552.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
No.8585-3/4 R DS (on) -- VGS R DS (on) -- Tc ID -- VDS ID -- VGS Ciss, Coss, Crss -- VDS IS -- VSDyfs -- ID SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A --0.1 23 5 7 --1.0 23 5 7 --10 23 100 120 140 100 120 140 --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 100 1000 10000 100 IT08739 IT08740 IT08737 IT08738 IT08744 IT08742IT08741 1.0 100 --1.0 --1023 5 7--0.1 23 5 7 --10023 5 7 V GS = --3V --4V --6V --10V Tc=25°C 25°C --25 Tc= --25 °C 75 Tc= ID = --13A Tc=75°C 25°C --25°C ID= --13A, V GS= --4V ID= --13A, V GS= --10V Tc= --25 75°C 25°C V DS = --10V f=1MHz Coss Ciss Crss IT08743 td(off) tf td(on) tr V DD = --30V V GS = --10V --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 V DS = --10V --0.01 --0.1 --1.0 --10 --100 Tc= --25 V GS =0V
No.8585-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PD -- Tc A S OVGS -- Qg PD -- Ta Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W --0.1 --1.0 --10 --100 --1.0 --1023 5 7--0.1 23 5 7 --10023 5 7 IT08746IT08745 0 10 20 30 40 50 --2 --4 --6 --8 --9 --1 --3 --5 --7 --10 V DS = --30V ID = --26A IT08747 20 40 60 80 100 120 140 160 IDP = --104A ID = --26A 100 µs1ms 10ms 100msDC operation Operation in this area is limited by RDS (on). 10µs IT08735 20 40 60 80 100 120 1.65 140 160 0.5 1.0 1.5 2.0 ≤10µs Tc=25°C Single pulse Note on usage : Since the 2SJ660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.