2SJ659 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • Motor drive, DC / DC converter.
  • A valanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS --60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D --14 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -56 A Allowable Power Dissipation P D 1.65 W Tc=25°C4 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 85 mJ Avalanche Current *2 I AV --14 A Note :*1 VDD =30V , L=500µH, IAV =--14A *2 L≤500µH, Single pulse Marking : J659 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use.

20707 TI IM TC-00000499 / N1805QA MS IM TB-00001072

General-Purpose Switching Device

Applications

No.8584-2/4 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =--1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -7A 7 12 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -7A, VGS =- -10V 102 133 m Ω R DS (on)2 I D =- -7A, VGS =- -4V 147 206 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 1020 pF Output Capacitance Coss V DS =- -20V, f=1MHz 110 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 76 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 10 ns Rise Time t r See specified Test Circuit. 180 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 80 ns Fall Time t f See specified Test Circuit. 100 ns Total Gate Charge Qg V DS =- -30V, VGS =--10V, ID =- -14A 21 nC Gate-to-Source Charge Qgs V DS =- -30V, VGS =--10V, ID =- -14A 3.8 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -30V, VGS =--10V, ID =- -14A 4.5 nC Diode Forward Voltage V SD IS=- -14A, VGS =0V - -1.0 - -1.2 V Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7513-002 7001-003 Switching Time Test Circuit Avalanche Resistance Test Circuit 10.2 8.811.0 2.7 11.5(9.4) 20.9 1.6 0.2 1.3 4.5 0.8 0.4 123 2.552.55 1.2 1 : Gate 2 : Drain 3 : Source SANYO : SMP PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --7A R L=4.29Ω VDD = --30V VOUT 2SJ659 VIN --10V VIN 50Ω0V --10V ≥50Ω RG DUT VDD L 10.2 8.8 1.5MAX2.7 9.93.0 0.2 1.3 4.5 0.8 1.35 0.4 1.4 1.2 2.552.55 0 to 0.3 12 3 2.552.55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD

No.8584-3/4 R DS (on) -- VGS R DS (on) -- Tc ID -- VDS ID -- VGS Ciss, Coss, Crss -- VDS IS -- VSDyfs -- ID SW Time -- ID Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Source Current, IS -- A 100 1000 10000 1.0 100 1000 100 150 200 250 300 350 --50 --25 0 25 5 07 5 100 125 150 --50 --100 --150 --200 --250 --300 IT08727 IT08728 IT08725 IT08726 --5 --10 --15 --20 --25 --30 --5 --10 --15 --20 --25 --30 IT08732 IT08730IT08729 V GS = --3V --4V --6V--10V Tc=25°C 25°C --25 Tc= --25 Tc= 75°C ID = --7A Tc=75°C 25°C --25°C ID= --7A, V GS= --4V ID= --7A, V GS= --10V f=1MHz Coss Ciss Crss IT08731 td(off) tf td(on) tr V DD = --30V V GS = --10V V DS = --10V --0.01 --0.1 --1.0 --10 --100 1.0 100 --1.0 - -1023 5 7--0.1 23 5 7 23 Tc= --25°C 75°C 25°C V DS = --10V Tc= --25 V GS =0V

No.8584-4/4PS SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PD -- Tc A S OVGS -- Qg PD -- Ta Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W --1.0 --0.1 --10 --100 23 5 7 --100--1.0 23 5 7 --10 IT08734IT08733 048 1 2 2416 20 --2 --4 --6 --8 --9 --1 --3 --5 --7 --10 V DS = --30V ID = --14A IT08736 20 40 60 80 100 120 140 160 IDP = --56A ID = --14A 100µs 1ms 10ms 100msDC operation Operation in this area is limited by RDS (on). IT08735 20 40 60 80 100 120 1.65 140 160 0.5 1.0 1.5 2.0 ≤10µs Tc=25°C Single pulse Note on usage : Since the 2SJ659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice.