2SJ657 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -25 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -100 A Allowable Power Dissipation P D 2.0 W Tc=25°C3 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -100 V Zero-Gate Voltage Drain Current I DSS VDS =- -100V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -13A 21 30 S Marking : J657 Continued on next page. P-Channl Silicon MOSFET 2SJ657 41504QA TS IM TA-100800 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. General-Purpose Switching Device Package Dimensions unit : mm 2063A [2SJ657] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23

No.7685-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -13A, VGS =- -10V 39 52 m Ω R DS (on)2 I D =- -13A, VGS =- -4V 49 69 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 6350 pF Output Capacitance Coss V DS =- -20V, f=1MHz 430 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 250 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 47 ns Rise Time t r See specified Test Circuit. 240 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 520 ns Fall Time t f See specified Test Circuit. 200 ns Total Gate Charge Qg V DS =- -50V, VGS =- -10V, ID =- -25A 110 nC Gate-to-Source Charge Qgs V DS =- -50V, VGS =- -10V, ID =- -25A 20 nC Gate-to-Drain“Miller”Charge Qgd V DS =- -50V, VGS =- -10V, ID =- -25A 20 nC Diode Forward Voltage V SD IS=- -25A, VGS =0 - -0.94 - -1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --13A R L=3.85Ω VDD = --50V VOUT 2SJ657 VIN --10V VIN ID -- VDS IT06587 ID -- VGS IT06588 --40 --50 --20 --30 --10 --40 --50 --20 --30 --10 ID -- VDS Tc=25°C --10V--6V --4V V GS = --3V V DS = --10V 25°C Tc= --25 Tc= --25 75°C Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A

No.7685-3/4 100 1000 10000 Ciss, Coss, Crss -- VDS IT06594 A S O --10 --100 --1.0 --0.1 23 5 7 23 5 7 2 2 35 7--0.1 --1.0 --10 --100 IT06596 SW Time -- ID IT06593 IT06592 --0.001 --100 --0.0175 --0.175 --1.075 --1075 IF -- VSD --2 --1 --4 --3 --5 --6 --7 --8 --9 11010 --10 VGS -- Qg IT06595 IT06591 --0.1 23 5 7 2 2 35 35 7--1.0 7--10 100 1.0 yfs -- ID 20 30 40 50 60 70 80 90 100 V DS = --50V ID = --25A tf V GS =0 --25 f=1MHzCiss Coss Crss Tc= --25 25°C 75°C V DS = --10V --0.1 100 2 35 7 2 35 7 2 3 57--1.0 --10 1000 Tc=75 td(off) V DD = --50V V GS = --10V <10µs 10µs100 µs1ms 10ms 100ms DC operationOperation in this area is limited by RDS (on). ID = --25A IDP = --100A td(on) Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Drain Current, IF -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Tc=25°C Single pulse R DS (on) -- VGS IT06589 R DS (on) -- Tc IT06590 120 100 ID = --13A Tc=75°C --25°C 25°C ID= --13A, V GS= --10V ID= --13A, V GS= --4V Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C tr

No.7685-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. 20 40 0.5 1.5 1.0 80 100 120 2.0 2.5 140 160 PD -- Ta IT06597 20 40 60 80 100 120 140 160 PD -- Tc IT06598 Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W