2SJ655 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Low ON-resistance.
  • 4V drive.
  • Ultrahigh-speed switching.
  • Motor drive, DC / DC converter.
  • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -12 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -48 A Allowable Power Dissipation P D 2.0 W Tc=25°C2 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 144 mJ Avalanche Current *2 I AV - -12 A Note :*1 VDD =- -50V , L=1mH, IAV =- -12A *2 L≤1mH, Single pulse Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -100 V Zero-Gate Voltage Drain Current I DSS VDS =- -100V, VGS =0V - -1 µA Gate-to-Source Leakage Current I GSS VGS = ±16V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -6A 9 13 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -6A, VGS =- -10V 100 136 m Ω R DS (on)2 I D =- -6A, VGS =- -4V 136 190 m Ω Marking : J655 Continued on next page. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

72506 MS IM TC-00000066 / 61504QB TS IM TA-3854

General-Purpose Switching Device

Applications

No.7712-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =- -20V, f=1MHz 2090 pF Output Capacitance Coss V DS =- -20V, f=1MHz 155 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 108 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 17 ns Rise Time t r See specified Test Circuit. 95 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 187 ns Fall Time t f See specified Test Circuit. 95 ns Total Gate Charge Qg V DS =- -50V, VGS =- -10V, ID =- -12A 41 nC Gate-to-Source Charge Qgs V DS =- -50V, VGS =- -10V, ID =- -12A 7 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -50V, VGS =- -10V, ID =- -12A 9 nC Diode Forward Voltage V SD IS=- -12A, VGS =0V - -0.88 - -1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7508-003 Avalanche Resistance Test Circuit 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.22.4 1.6 1.2 0.70.75 2.55 2.55 123 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --6A R L=8.33Ω VDD = --50V VOUT 2SJ655 VIN --10V VIN 50Ω0V --10V ≥50Ω RG VDD L 2SJ655

No.7712-3/5 Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF --0.1 --1.023 5 7 --1023 5 7 2 3 100 1000 Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns IT05379 --0.001 --100 --0.0175 --0.175 --1.075 --1075 Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain Current, ID -- A IT05378 --0.1 1.0 23 5 7 23 5 7 --1.0 2--10 100 Forward Transfer Admittance, yfs -- S yfs -- ID Tc= --25 25°C 75°C V GS =0V Tc=75 --25 td(off) tf tr td(on) V DD = --50V V GS = --10V Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ IT05376 Case Temperature, Tc -- °C R DS (on) -- Tc IT05377 100 150 200 250 --50 --25 0 25 50 75 100 125 150 V DS = --10V ID= --6A, VGS = --4V ID= --6A, V GS= --10V 300 100 150 200 250 ID = --6V Tc=75°C 25°C --25°C 100 1000 f=1MHz Ciss Coss Crss IT05381IT05380 --20 --25 --10 --15 --5 Drain-to-Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A IT05374 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A IT05375 Tc=25°C --10V--6V--4V --8V --20 --25 --10 --15 --5 Tc= --25 --25 °CTc=75 V GS = --3V V DS = --10V

No.7712-4/5 20 40 0.5 1.5 1.0 80 100 120 2.0 2.5 140 160 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT05384 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C PD -- Tc Allowable Power Dissipation, PD -- W IT05385 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A --10 --100 --1.0 --0.1 23 5 7 23 5 7 2--1.0 --10 --100 IT05383 --2 --1 --4 --3 --5 --6 --7 --8 --9 4535 4025 301051 5 2 0 --10 Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Source V oltage, VGS -- V IT05382 <10µs 10µs100µs 10ms 100ms DC operation ID = --12A IDP = --48A Operation in this area is limited by RDS (on). Tc=25°C Single pulse 1ms V DS = --50V ID = --12A

No.7712-5/5PS Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. Note on usage : Since the 2SJ655 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.