2SJ654 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -100 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D -- 8 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -32 A Allowable Power Dissipation P D 2.0 W Tc=25°C2 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -100 V Zero-Gate Voltage Drain Current I DSS VDS =- -100V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -4A 4 6 S Marking : J654 Continued on next page. P-Channl Silicon MOSFET 2SJ654

22004 TS IM TA-100526

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. DC / DC Converter Applications Package Dimensions unit : mm 2063A [2SJ654] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23

No.7537-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -4A, VGS =- -10V 240 315 m Ω R DS (on)2 I D =- -4A, VGS =- -4V 320 450 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 945 pF Output Capacitance Coss V DS =- -20V, f=1MHz 72 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 60 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 12 ns Rise Time t r See specified Test Circuit. 65 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 80 ns Fall Time t f See specified Test Circuit. 38 ns Total Gate Charge Qg V DS =- -50V, VGS =- -10V, ID =- -8A 20 nC Gate-to-Source Charge Qgs V DS =- -50V, VGS =- -10V, ID =- -8A 3.8 nC Gate-to-Drain“Miller”Charge Qgd V DS =- -50V, VGS =- -10V, ID =- -8A 4.5 nC Diode Forward Voltage V SD IS=- -8A, VGS =0 - -0.92 - -1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --4A R L=12.5Ω VDD = --50V VOUT 2SJ654 VIN --10V VIN Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A ID -- VDS IT06183 ID -- VGS IT06184 --14 --18 --6 --10 --2 --16 --8 --12 --4 --16 --20 --8 --12 --4 --14 --18 --6 --10 --2 Tc=25°C --6V --10V --4V --8V Tc= --25 --25 Tc=75 25°C V GS = --3V V DS = --10V

No.7537-3/4 Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Drain Current, ID -- A Switching Time, SW Time -- ns Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Cutoff V oltage, VGS (off) -- V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C R DS (on) -- VGS IT06185 R DS (on) -- Tc IT06186 --2 600 200 100 700 600 300 400 500 ID = --4A Tc= 75°C 25°C 100 200 300 400 500 ID= --4A, V GS = --4V ID= --4A, VGS= --10V --25°C 100 1000 Ciss, Coss, Crss -- VDS IT06191 100 SW Time -- ID IT06190IT06189 --100 --0.01 --0.1 --1.0 --10 IF -- VSD --2 --1 --4 --3 --5 --6 --7 --8 --9 2015105 --10 VGS -- Qg IT06192 IT06188 --0.1 23 5 723 5 7 2 --1.0 3--10 1.0 yfs -- ID --50 --25 0 25 50 75 100 --2.0 --1.5 --0.5 --1.0 --2.5 125 150 VGS (off) -- Tc IT06187 V DS = --50V ID = --8A V DD = --50V V GS = --10V td(off) tf tr td(on) V DS = --10V Tc= --25 25°C 75°C V GS =0 Tc=75 --25 f=1MHz Ciss Coss Crss V DS = --10V ID = --1mA

No.7537-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Tc=25°C Single pulse A S O --10 --1.0 --0.1 23 5 7 23 5 7--1.0 --10 --100 2 IT06193 20 40 0.5 1.5 1.0 80 100 120 2.0 2.5 140 160 PD -- Ta IT06194 Operation in this area is limited by RDS (on). ID = --8A IDP = --32A DC operation <10µs 10µs 100 µs 10ms 100ms 1ms 20 40 60 80 100 120 140 160 PD -- Tc IT06195