2SJ653

2SJ653 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -37 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -148 A Allowable Power Dissipation P D 2.0 W Tc=25°C3 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -19A 26.5 38 S Marking : J653 Continued on next page. P-Channl Silicon MOSFET 2SJ653

72503 TS IM TA-4246

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. General-Purpose Switching Device Applications Package Dimensions unit : mm 2063A [2SJ653] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23

No.7626-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -19A, VGS =- -10V 19 25 m Ω R DS (on)2 I D =- -19A, VGS =- -4V 26 37 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 6500 pF Output Capacitance Coss V DS =- -20V, f=1MHz 700 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 500 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 53 ns Rise Time t r See specified Test Circuit. 245 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 495 ns Fall Time t f See specified Test Circuit. 255 ns Total Gate Charge Qg V DS =- -30V, VGS =- -10V, ID =- -37A 120 nC Gate-to-Source Charge Qgs V DS =- -30V, VGS =- -10V, ID =- -37A 22 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -30V, VGS =- -10V, ID =- -37A 22 nC Diode Forward Voltage V SD IS=- -37A, VGS =0 - -0.99 - -1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --19A R L=1.58Ω VDD = --30V VOUT 2SJ653 VIN --10V VIN ID -- VDS IT06546 ID -- VGS IT06547 --70 --60 ID -- VDS --50 --40 --30 --20 --10 --70 --60 --50 --40 --30 --20 --10 --10V--6V --4V V GS = --3V V DS = --10VTc=25°C Tc= --25 Tc= --25 Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A

No.7626-3/4 23 5 7 23 5 7 2 --10 35 7--0.1 --1.0 --100 Ciss, Coss, Crss -- VDS IT06553 A S O --100 --0.1 IT06554 SW Time -- ID IT06552 IT06551 --0.001 --100 --0.0175 --0.175 --1.075 --1075 IF -- VSD IT06550 --0.1 23 5 7 --1.0 100 yfs -- ID --10 --1.0 ID = --37A IDP = --148A 100 µs 10µs 10ms 100ms 1ms V GS =0 --25 23 5 7 --10 23 5 7 --100 V DS = --10V Tc= --25 75°C 25°C Tc=75 Operation in this area is limited by RDS (on). DC operation Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A <10µs Tc=25°C Single pulse R DS (on) -- VGS IT06548 R DS (on) -- Tc IT06549 0 0 Tc= --25°C 25°C 75°C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V ID = --19A ID= --19A, V GS= --4V ID= --19A, V GS= --10V 1000 100 2 3 5 7 --10 2 3 5 7 td(off) tf tr td(on) V DD = --30V V GS = --10V --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 1201101009080706050403020100 Gate-to-Source V oltage, VGS -- V VGS -- Qg Total Gate Charge, Qg -- nC IT06560 V DS = --30V ID= --37V 10000 1000 100 Ciss Coss Crss f=1MHz

No.7626-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2003. Specifications and information herein are subject to change without notice. PS 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 PD -- Ta Allowable Power Dissipation, PD -- W IT06545Ambient Temperature, Ta -- °C 20 40 60 80 100 120 140 160 PD -- Tc IT06555 Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W