2SJ651_03 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -20 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -80 A Allowable Power Dissipation P D 2.0 W Tc=25°C2 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0 - -1 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.2 - -2.6 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -10A 11 17 S Marking : J651 Continued on next page. P-Channl Silicon MOSFET 2SJ651

52703 TS IM TA-100559

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. DC / DC Converter Applications Package Dimensions unit : mm 2063A [2SJ651] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23

No.7501-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -10A, VGS =- -10V 45 60 m Ω R DS (on)2 I D =- -10A, VGS =- -4V 65 92 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 2200 pF Output Capacitance Coss V DS =- -20V, f=1MHz 220 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 165 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 18 ns Rise Time t r See specified Test Circuit. 115 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 190 ns Fall Time t f See specified Test Circuit. 120 ns Total Gate Charge Qg V DS =- -30V, VGS =- -10V, ID =- -20A 45 nC Gate-to-Source Charge Qgs V DS =- -30V, VGS =- -10V, ID =- -20A 7.4 nC Gate-to-Drain“Miller”Charge Qgd V DS =- -30V, VGS =- -10V, ID =- -20A 9 nC Diode Forward Voltage V SD IS=- -20A, VGS =0 - -0.95 - -1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --10A R L=3Ω VDD = --30V VOUT 2SJ651 VIN --10V VIN Gate-to-Source V oltage, VGS -- VDrain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A IT06170 ID -- VGS IT06171 --35 --45 --15 --25 --5 --40 --20 --30 --10 --40 --50 --20 --30 --10 --35 --45 --15 --25 --5 ID -- VDS Tc=25°C --6V --10V --4V --8V Tc= --25 --25 Tc= 75 25°C V GS = --3V V DS = --10V

No.7501-3/4 Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Drain Current, ID -- A Switching Time, SW Time -- ns Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Cutoff V oltage, VGS (off) -- V Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Case Temperature, Tc -- °C R DS (on) -- VGS IT06172 R DS (on) -- Tc IT06173 160 140 120 100 120 140 ID = --10A Tc= 75°C 25°C 100 ID= --10A, V GS= --4V ID= --10A, VGS= --10V --25°C 100 1000 Ciss, Coss, Crss -- VDS IT06178 100 SW Time -- ID IT06177 --2 --1 --4 --3 --5 --6 --7 --8 --9 4525 30 35 401051 5 2 0 --10 VGS -- Qg IT06179 IT06175 --0.1 23 5 7 23 5 7 23 5 7--1.0 --100 --10 100 1.0 yfs -- ID --50 --25 0 25 50 75 100 --2.0 --1.5 --0.5 --1.0 --2.5 125 150 VGS (off) -- Tc IT06174 V DS = --30V ID = --20A V DD = --30V V GS = --10V td(off) tf tr td(on) V DS = --10V Tc= --25 25°C 75°C f=1MHz Ciss Coss Crss V DS = --10V ID = --1mA IT06176 IF -- VSD V GS =0 Tc=75 --25 --0.01 --100 --0.1 --1.0 --10

No.7501-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S O --10 --100 --1.0 --0.1 2 3 57 2 3 57 2 3 57--0.1 --1.0 --10 --100 IT06180 20 40 0.5 1.5 1.0 80 100 120 2.0 2.5 140 160 PD -- Ta IT06181 Operation in this area is limited by RDS (on). ID = --20A IDP = --80A DC operation <10µs 10µs100 µs 10ms 100ms 1ms Tc=25°C Single pulse 20 40 60 80 100 120 140 160 PD -- Tc IT06182