2SJ630 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -12 V Gate-to-Source Voltage V GSS ±8V Drain Current (DC) I D -- 6 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -24 A Allowable Power Dissipation P D Mounted on a ceramic board (600mm25 0.8mm) 1.5 W Tc=25°C 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0V - -12 V Zero-Gate Voltage Drain Current I DSS VDS =- -12V, VGS =0V - -10 µA Gate-to-Source Leakage Current I GSS VGS =±6.4V, VDS =0V ±10 µA Cutoff Voltage V GS (off) V DS =- -6V, ID =- -1mA - -0.3 - -1.0 V Forward Transfer Admittance yfs VDS =- -6V, ID =- -3A 5.7 9.5 S R DS (on)1 I D =- -3A, VGS =- -4.5V 45 58 m Ω Static Drain-to-Source On-State ResistanceR DS (on)2 I D =- -1.5A, VGS =- -2.5V 57 80 m Ω R DS (on)3 I D =- -0.3A, VGS =- -1.8V 78 112 m Ω Input Capacitance Ciss V DS =- -6V, f=1MHz 940 pF Output Capacitance Coss V DS =- -6V, f=1MHz 230 pF Reverse Transfer Capacitance Crss V DS =- -6V, f=1MHz 180 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 12 ns Rise Time t r See specified Test Circuit. 143 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 71 ns Fall Time t f See specified Test Circuit. 89 ns Marking : MD Continued on next page. SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81006PA MS IM TC-00000120 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 2SJ630 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

No. A0489-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Total Gate Charge Qg V DS =- -6V, VGS =- -4.5V, ID =- -6A 11 nC Gate-to-Source Charge Qgs V DS =- -6V, VGS =- -4.5V, ID =- -6A 1.6 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -6V, VGS =- -4.5V, ID =- -6A 2.8 nC Diode Forward Voltage V SD IS=- -6A, VGS =0V - -0.95 - -1.5 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-003 PW=10 µs D.C.≤1% P. G 50Ω G S D ID = --3A R L=2Ω VDD = --6V VOUT 2SJ630 VIN --4.5V VIN 1 : Gate 2 : Drain 3 : Source SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View ID -- VDS ID -- VGS Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V --1 --2 --4 --6 --8 --3 --5 --7 --9 0 --0.2--0.1 --1 --2 --3 --4 --5 --6 --1.5V--2.5V --4.5V IT11389 V DS = --6V IT11390 --3.0V --3.5V V GS = --1.0V --25 Ta=75 --1.8V--2.0V Drain Current, ID -- A

No. A0489-3/4 VGS -- Qg A S O SW Time -- ID Ciss, Coss, Crss -- VDS yfs -- ID IS -- VSD Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Drain Current, ID -- A Switching Time, SW Time -- ns Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A R DS (on) -- VGS R DS (on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C 1000 100 02468 1 0 1 2 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 IT11397 V DD = --6V V GS = --4.5V td(on) td(off) tr tf IT11395 IT11393 0.1 1.0 100 1000 V DS = --6V 75°CTa= --25 IT11394 --0.01 --0.1 --1.0 V GS =0V f=1MHz Ciss Coss Crss IT11396 V DS = --6V ID = --6A 25°C --25 Ta=75 120 100 140 160 - -60 - -40 - -20 0 20 40 60 80 100 120 140 160 IT11391 IT11392 100 140 120 160 Ta=25°C --3.0AID = --0.3A ID = --0.3A, VGS = --1.8V ID = --1.5A, VGS = --2.5V ID = --3.0A, VGS = --4.5V 100msDC operation 100 µs 10ms --0.1 --1.0 --0.01 IT11398 Operation in this area is limited by RDS (on). ID = --6A IDP = --24A 10µs1ms --1.5A 35 7 --10 --10 23 3 57 --10 --10 Tc=25°C Single pulse

No. A0489-4/4PS Note on usage : Since the 2SJ630 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 20 40 0.5 2.0 1.5 1.0 60 80 100 120 140 160 IT11399 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 3.5 4.0 IT11400 PD -- Ta Allowable Power Dissipation, PD -- W Mounted on a ceramic board (600mm 250.8mm) Ambient Temperature, Ta -- °C PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Ta -- °C Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice.