2SJ597

2SJ597 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ597 Package Dimensions unit : mm 2083B unit : mm 2092B [2SJ597]

82200 TS IM TA-2801

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 [2SJ597] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6

No.6670-2/4 PW=10 µs D.C.≤1% --10V VIN P. G 50Ω G S ID = --2A R L=15Ω VDD = --30V VOUT 2SJ597 VIN D Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D -- 4 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -16 A Allowable Power Dissipation P D Tc=25°C1 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -60 V Zero-Gate Voltage Drain Current I DSS VDS =- -60V, VGS =0 - -10 µA Gate-to-Sourse Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.0 - -2.4 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -2A 2.3 3.2 S R DS (on)1 I D =- -2A, VGS =- -10V 300 400 m Ω Static Drain-to-Sourse On-State ResistanceR DS (on)2 I D =- -1A, VGS =-4V 400 560 m Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 270 pF Output Capacitance Coss V DS =- -20V, f=1MHz 70 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 20 pF Turn-ON Delay Time t d(on) See specified Test Circuit 8 ns Rise Time t r See specified Test Circuit 11 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 28 ns Fall Time t f See specified Test Circuit 13 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -4A 9.8 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -4A 1.4 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -4A 1.7 nC Diode Forward Voltage V SD IS=- -4A, VGS =0 - -0.92 - -1.2 V Switching Time Test Circuit --3 --2 --1 --4 --6 --5 --7 --8 Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A V DS = --10V --0.5 --1.0 --1.5 --3.0 --2.5 --0.4 --2.0 --4.5 --4.0 --3.5 Drain-to-Source-V oltage, VDS -- V ID -- VDS Drain Current, ID -- A V GS = --2.5V °CTc= --25 IT02076 IT02077 --3.0V --10.0V --6.0V --5.0V--8.0V --3.5V --4.0V

No.6670-3/4 Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ 100 200 300 400 500 600 700 800 900 1000 Case Temperature Tc -- °C R DS (on) -- Tc 100 200 300 400 500 600 700 800 Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS Tc=25°C IT02078 IT02079 --60 --40 --20 0 20 40 60 80 100 120 160 140 ID= --1A, V GS= --4V ID= --2A, V GS= --10V ID = --2A--1A --1.0 --10 534 1 0 987612 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Drain Current, ID -- A VGS -- Qg Gate-to-Source V oltage, VGS -- V V DS = --10V ID = --4A IT02083 A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A DC operation 100µs <10µs 1ms 100ms 10ms IDP = --16A ID = --4A 23 5 723 5 7 --100 --1.0 --10 --100 --0.1 IT02085 Operation in this area is limited by RDS (on). Tc=25°C Single pulse --0.1 23 5 7 23 5 7 --1.0 1.0 100 --10 Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns V DD = --30V V GS = --10V td(on) td(off) tr tf IT02084 Drain Current, ID -- A IT02080 IT02081 0.01 0.1 --0.00123 5 7 --0.0123 5 7 --0.1 23 5 7 23 5 7--1.0 1.0 --0.01 --0.1 --10 --1.0 --10 Forward Transfer Admittance, yfs -- S yfs -- ID 75°C 25°C Diode Forward V oltage, VSD -- V Foward Current, IF -- A IF -- VSD V GS = 0 --25 Tc=75 V DS = --10V Tc= --25 100 --10 --20 1000 --60--30 --40 --50 Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF f=1MHz Ciss Coss Crss IT01230

No.6670-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS 1.2 1.0 0.8 0.6 0.4 0.2 20 40 60 80 100 120 140 160 Case Temperature, Tc -- °C PD -- Tc Allowable Power Dissipation, PD -- W IT02087 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT02086