2SJ522

2SJ522 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance. 2SJ522 Package Dimensions unit : mm 2093A [2SJ522]

80902 TS IM TA-100038

1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 10.2 1.2 2.55 2.552.55 2.55 4.5 0 to 0.3 0.4 1.3 9.93.0 2.7 1.35 8.8 1.4 1.5max 0.8 0.8 123 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. unit : mm 2090A [2SJ522] 1 : Gate 2 : Drain 3 : Source SANYO : SMP 10.2 20.9 11.59.4 0.8 1.6 1.2 0.9 11.0 8.8 4.5 1.3 0.4 2.552.55 2.7 123

No.7127-2/4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -400 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D -- 5 A Drain Current (Pulse) I DP - -20 A Allowable Power Dissipation P D 1.65 W Tc=25°C7 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -10mA, VGS =0 - -400 V Zero-Gate Voltage Drain Current I DSS VDS =- -320V, VGS =0 - -1.0 mA Gate-to-Sourse Leakage Current I GSS VGS =±30V, VDS =0 ±100 nA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -2.0 - -3.0 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -2.5A 1.3 2.6 S Static Drain-to-Source On-State ResistanceR DS (on) I D =- -2.5A, VGS =- -10V 1.5 2.0 Ω Input Capacitance Ciss V DS =- -20V, f=1MHz 1500 pF Output Capacitance Coss V DS =- -20V, f=1MHz 240 pF Reverse Transfer Capacitance Crss V DS =- -20V, f=1MHz 90 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 25 ns Rise Time t r See specified Test Circuit. 70 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 340 ns Fall Time t f See specified Test Circuit. 150 ns Diode Forward Voltage V SD IS=- -5A, VGS =0 - -1.5 V Marking : J522 *(Note) Be careful in handling the 2SJ522 because it has no protection diode between gate and source. Switching Time Test Circuit PW=10 ms D.C.≤1% --10V VIN P. G 50W G S ID = --2.5A R L=80W VDD = --200V VOUT 2SJ522 VIN D

No.7127-3/4 --50 --25 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 R DS (on) -- VGS IT03699 IT03697 ID -- VDS --1 --2 --3 --4 --8 --5 --6 --7 IT03698 --1 --2 --3 --4 --6 --8 --5 --7 25°C 75°C V DS = --10V Tc=25°C ID -- VGS Tc= --25°C IT03700 R DS (on) -- Tc ID = --5A --2.5A --1A V GS = --10V --20V --10.0V --4.0V --5.0V --6.0V --4.5V V GS = --3.5V Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Static Drain-to-Source On-State Resistance, RDS (on) -- Ω 0.5 1.0 1.5 2.0 2.5 3.0 1000 10000 100 --0.1 IT03704 Ciss, Coss, Crss -- VDS --1.0 --10 --0.01 IT03703 IF -- VSD V GS =0 Tc=75 --25 IT03701 V DS = --10V --1.0 yfs -- ID --50 --25 0 25 50 75 100 125 150 IT03702 VGS (off) -- Tc --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 V DS = --10V ID = --1mA Tc= --25 75°C 25°C f=1MHz Ciss Coss Crss Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain Current, ID -- A Forward Transfer Admitance, yfs -- S Cutoff V oltage, VGS (off) -- V Case Temperature, Tc -- °C

No.7127-4/4PS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. --0.01 --1.0 --10 --0.1 00 20 40 60 80 100 120 140 160 0.5 1.0 1.5 1.65 2.0 PD -- TaForward Bias A S O IT03706 00 20 40 60 80 100 120 140 160 PD -- Tc IT03707 IT03705 --100 23 5 7--10 23 5 7--1.0 23 5 7 DC operation 100 µs 1ms 10ms 10µsIDP = --20A Operation in this area is limited by RDS (on). ID = --5A Tc=25°C Single pulse 100ms Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A