2SJ501

2SJ501 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive. Electrical Characteristics at Ta = 25˚C 1 : Gate 2 : Source 3 : Drain SANYO : CP PW £10ms, duty cycle£1% Marking : EM Continued on next page. retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 02–V egatloVecruoS-ot-etaGV SSG 01±V )CD(tnerruCniarDI D 5.0–A )esluP(tnerruCniarDI PD 0.2–A noitapissiDrewoPelbawollAP D 52.0W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1–= SG 0=0 2–V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V02–= SG 0=0 1–A µ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V8±= SD 0=0 1±A µ egatloVffotuCV )ffo(SG V SD I,V01–= D Am1–=5 .0–5 .1–V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01–= D Am003–=2 .00 .1S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R )no(SD 1I D V,Am003–= SG V4–=0 240 06m W R )no(SD 2I D V,Am05–= SG V5.2–=0 360 001m W

No.5948–2/4 Continued from preceding page. Switching Time Test Circuit 50ΩP.G 2SJ501 S G D VOUT VDD=–10V VIN ID=–300mA RL=33Ω PW=10µs D.C.≤1% VIN0V –4V retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am ecnaticapaCtupnIs siCV SD zHM1=f,V01–=0 01F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01–=0 6F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01–=5 2F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS0 1s n emiTesiRt r tiucriCtseTdeificepseeS7 1s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 3s n emiTllaFt f tiucriCtseTdeificepseeS5 3s n egrahCetaGlatoTg QV SD V,V01–= SG I,V01–= D Am005–=5 C n egrahCecruoS-ot-etaGs gQV SD V,V01–= SG I,V01–= D Am005–=1 C n egrahC"relliM"niarD-ot-etaGd gQV SD V,V01–= SG I,V01–= D Am005–=1 C n egatloVdrawroFedoiDV DS IS V,Am005–= SG 0=7 8.0–5 .1–V ID -VDS ID -VGS R DS(on) -VGS Ta=25°CV DS =-10V V DS =-10V V GS =-1.5V -8.0V -6.0V -4.0V -3.0V -10.0V -2.0V-2.5V Ta=-25 Ta=-25 25°C 75°C ID =-0.3A ID =-0.05A -0.2 -0.3 -0.4 -0.5 -0.6 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -2.0 -1.8 -1.6 -0.01 0.1 1.0 -0.1 23 5 723 5 7 -1.0 23 100 200 300 400 500 600 700 800 900 1000 Drain Current, ID –A Drain-to-Source Voltage, VDS –V Drain Current, ID –A Gate-to-Source Voltage, VGS –V Forward Transfer Admittance, |yf s|–S Drain Current, ID –A |yfs | - ID Gate-to-Source Voltage, VGS –V Static Drain-to-Source On-State Resistance, RDS(on) –m W

No.5948–3/4 1ms SW Time - ID A S O P D - Ta V DD =-10V VGS =-4V IDP = -2A Operation in this area is limited by RDS (on). Ciss,Coss,Crss-VDS VGS -Qg f=1MHz Ciss Coss Crss V DS =-10V ID =-0.5A td(on) tr tf td(off) 10ms 100µs DC operation ID = -0.5A 100 1000 -10 1.0 100 1000 35 7 -0.1 23 23 57 -1.0 -0.01 -0.1 -1.0 -0.01 23 5 7 -0.1 23 5 7 -1.0 23 23 57 -10 02 0 0.1 0.2 0.3 0.25 0 40 60 80 100 120 140 160 Switching Time, SW Time – ns Drain Current, ID –A Drain Current,ID –A Drain-to-Source Voltage, VDS –V Ta=25°C Single pulse Ciss, Coss, Crss – pF Gate-to-Source Voltage, VGS – V Drain-to-Source Voltage, VDS –V Allowable Power Dissipation, PD –W Ambient Temperature, Ta – ˚C Total Gate Charge, Qg – nC R DS(on) -Ta V GS =0 ID=-0.3A,V GS =-4V Ta=-25 IF -VSD ID=-0.05A,V GS=-2.5V 100 200 1000 900 500 600 700 800 400 300 -60 -40 -20 0 20 40 60 80 100 120 160 140 -0.001 -0.01 -0.1 -1.0 -10 Forward Current, IF –A Static Drain-to-Source On-State Resistance, RDS(on) –m W Diode Forward Voltage, VSD –VAmbient Temperature, Ta – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. 2SJ501 PS No.5948–4/4