2SJ499

2SJ499 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-state resistance.
• 4V drive. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ499 Package Dimensions unit : mm 2083B unit : mm 2092B [2SJ499]

82200 TS IM TA-2305

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. P-Channel Silicon MOSFET Load Switching Applications 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 6.5 2.3 0.5 1.55.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 [2SJ499]

No.6589-2/4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -10 A Drain Current (Pulse) I DP PW ≤10ms, duty cycle≤1% - -32 A Allowable Power Dissipation PD 1.0 W Tc=25°C3 0 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -30 V Zero-Gate Voltage Drain Current I DSS VDS =- -30V, VGS =0 - -10 µA Gate-to-Source Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -1mA - -1.0 - -2.5 V Forward Transfer Admittance yfs VDS =- -10V, ID =- -5A 8 10 S Static Drain-to-Source On-State Resistance R DS (on)1 I D =- -5A, VGS =- -10V 27 45 m Ω R DS (on)2 I D =- -2A, VGS =- -4V 48 68 m Ω Input Capacitance Ciss V DS =- -10V, f=1MHz 1500 pF Output Capacitance Coss V DS =- -10V, f=1MHz 800 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 370 pF Turn-ON Delay Time t d(on) See specified Test Circuit 15 ns Rise Time t r See specified Test Circuit 80 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 150 ns Fall Time t f See specified Test Circuit 140 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -10A 45 nC Gate-to-Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -10A 6 nC Gate-to-Drain “Miller” Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -10A 11 nC Diode Forward Voltage V SD IS=- -5A, VGS =0 - -0.9 - -1.2 V Switching Time Test Circuit PW=10 µs D.C.≤1% --10V VIN P. G 50Ω ID =--5A R L=3Ω VDD =--15V VOUT 2SJ499 VIN G S D

No.6589-3/4 Case Temperature, Tc -- °C R DS (on) -- Tc Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Static Drain-to-Source On-State Resistance, RDS (on) -- mΩ Gate-to-Source V oltage, VGS -- V R DS (on) -- VGS yfs -- ID Ciss, Coss, Crss -- VDS Drain-to-Source V oltage, VDS -- V Diode Forward V oltage, VSD -- V Total Gate Charge, Qg -- nC Ciss, Coss, Crss -- pF Gate-to-Source V oltage, VGS -- V Forward Current, I F -- A Drain Current, ID -- A Forward Transfer Admittance, yfs -- S VGS -- Qg IF -- VSD IT01948 100 --2A ID = --5A --60 --20 0--40 20 40 60 80 100 120 140 160 IT01949 ID= --5A, V GS = --10V ID= --2A, V GS= --4V IT01952 IT01951 --1.0 --10 --0.1 --0.01 --100 Tc=75 --25 10000 1000 100 Ciss Coss Crss f=1MHz IT01953 0 5 10 15 20 25 30 35 40 45 --2 --1 --4 --3 --6 --5 --8 --7 --10 --9 V DS = --10V ID = --10A 1.0 0.1 100 IT01950 Tc= --25 75°C V DS = --10V 25°C V GS =0 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A ID -- VDS --2 --4 --6 --8 --10 --12 IT01946 V GS = --2.5V IT01947 V DS =--10V --4.0V --3.5V --3.0V --8.0V --10.0V --6.0V --0 --4 --2 --8 --6 --12 --10 --16 --14 --20 --18 Tc=75 --25 °C 25°C

No.6589-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2000. Specifications and information herein are subject to change without notice. PS PD -- Ta Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W Amibient Tamperature, Ta -- °C Allowable Power Dissipation, PD -- W PD -- Tc --0.1 --1.0 23 5 723 5 7 --10 23 1000 100 00 20 40 60 80 100 120 140 160 0.4 0.2 0.6 1.0 0.8 1.2 IT01957 00 20 40 60 80 100 120 140 160 IT01956 SW Time -- ID A S O Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Switching Time, SW Time -- ns IT01954 V DD = --15V V GS = --10V td(on) trtd(off) tf --1.0 --10 --100 --0.1 --0.1 23 5 7 --1.0 23 5 7 --10 23 5 7 --100 IT01955 Operation in this area is limited by RDS (on). ID = --10A DC operation 1ms 10ms IDP = --32A 10µA 100µA Tc=25°C Single pulse