2SJ492-ZJ KEXIN

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www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ492-ZJ ■ Features

  • VDS (V) =-60V
  • ID =-20 A
  • RDS(ON) ＜ 100m Ω (VGS =-10V)
  • RDS(ON) ＜ 185mΩ (VGS =-4V)
  • Low Ciss: Ciss = 1210 pF (TYP.) Source Body Diode Gate Protection Diode Gate Drain■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 VGS(AC) ± 20 VGS(DC) -20,0 Continuous Drain Current ID -20 Pulsed Drain Current (Note.2) IDM -80 Single Avalanche Current (Note.3) IAS -20 1.5 Single Avalanche Energy (Note.3) EAS 40 mJ Thermal Resistance.Junction- to-Ambient RthJA 83.3 Thermal Resistance.Junction- to-Case RthJC 1.79 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Power Dissipation PD W A Gate-Source Voltage (Note.1) V ℃/W Note.1: f = 20 kHz, Duty Cycle ≤ 10% (+Side) Note.2: PW ≤ 10u s,Duty Cycle ≤ 1% Note.3: Starting TJ = 25 °C, RA = 25Ω , VGS = –20 V → 0 Tc = 25℃ Ta = 25℃

www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±10 uA Gate Cut off Voltage VGS(off) VDS=-10V,ID=-1mA -1 -2 V VGS=-10V, ID=-10A 100 VGS=-4V, ID=-10A 185 Forward Transconductance gFS VDS=-10V, ID=-10A 5 12 S Input Capacitance Ciss 1210 Output Capacitance Coss 520 Reverse Transfer Capacitance Crss 180 Total Gate Charge Qg 42 Gate Source Charge Qgs 8 Gate Drain Charge Qgd 10 Turn-On DelayTime td(on) 16 Turn-On Rise Time tr 140 Turn-Off DelayTime td(off) 90 Turn-Off Fall Time tf 80 Body Diode Reverse Recovery Time trr 125 Body Diode Reverse Recovery Charge Qrr 280 nC Diode Forward Voltage VSD IF=-20A,VGS=0V -1 V nC ns IF=-20A, VGS=0, dI/dt=50A/μs pF Static Drain-Source On-Resistance RDS(On) mΩ VGS(on)=-10V, VDS=-30V, ID=-10A, RG=10Ω VGS=0V, VDS=-10V, f=1MHz VGS=-10V, VDS=-48V, ID=-20A ■ Typical Characterisitics DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE TC - Case Temperature - °C PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 P-Channel MOSFET 2SJ492-ZJ

www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A −0.1 −10 −100 −1000 −1 −10 −100 TC = 25˚C Single Pulse 1 ms 10 ms ID(pulse) RDS(on) Limited (at V GS =10 V) 100 µs Power Dissipation Limited DC ID(DC) Pw = 10 µs 100 ms DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0 −8 −12 −16 −80 −100 Pulsed VGS = −10 V −60 −40 −20 −4 V FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A −10 −100 −1000 Pulsed 0 −5 −10 Tch = −25˚C 25˚C 125˚C −15 VDS = −10 V −20 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A |yfs | - Forward Transfer Admittance - S VDS = −10 V Pulsed −0.1 −1.0 100 −10 −100 0.1 Tch = −25˚C 25˚C 75˚C 125˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω 0 −5 0.1 −10 −15 Pulsed0.3 0.2 ID = −10 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - Ω 0.10 0.15 −10 −100 Pulsed VGS = −10 V VGS = −4 V 0.05 P-Channel MOSFET 2SJ492-ZJ

www.kexin.com.cn4 MOSF ET ■ Typical Characterisitics TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.001 0.01 0.1 100 1000 1m 10 m 100 m 1 10 100 1000 10µ µ100 Single Pulse Rth(ch-c)= 1.79 ˚C/W Rth(ch-a)= 83.3 ˚C/W GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cutoff Voltage - V VDS = −10 V ID = −1 mA −50 0 50 100 150 −1.0 −2.0 −1.5 −0.5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-State Resistance - Ω −50 0.06 0 50 100 150 ID = −10A 0.12 0.24 0.18 VGS = −4 V −10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A −0.1 −10 −100 Pulsed 2 3 VGS = −4 V VGS = 0V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF −0.1 100 1000 10000 −1 −10 −100 VGS = 0 f = 1 MHz Ciss Coss Crss P-Channel MOSFET 2SJ492-ZJ

www.kexin.com.cn 5 MOSFET ■ Typical Characterisitics SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 1.0 −0.1 100 1000 −1 −10 −100 VDD = −30V VGS = −10V RG = 10Ω td(off) td(on) tr tf REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Current - A trr - Reverse Recovery Time - ns di/dt = 50A/ VGS = 0 sµ −0.1 −1 −10 −100 1000 100 VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS QG - Gate Charge - nC VDS - Drain to Source Voltage - V 0 20 40 60 80 −20 −40 −60 −80 VDD = −48 V −24 V −12 V VGS VDS −12 −14 −10 ID = −16 A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD L - Inductive Load - H IAS - Single Avalanche Current - A –1.0 –10 –100 1m 10 m VDD = –30V VGS = –20V→0 RG = 25Ω ID = –20A EAS = 40 mJ 10µ 100µ –0.1 SINGLE AVALANCHE ENERGY DERATING FACTOR Starting Tch - Starting Channel Temperature - ˚C Energy Derating Factor - % 120 160 50 75 100 125 150 VDD = –30 V RG = 25 Ω VGS = –20 V → 0 IAS <= –20 A 100 140 P-Channel MOSFET 2SJ492-ZJ