2SJ492 KEXIN
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RDS(on)1 = 100 m (MAX.) (VGS =- 1 0V ,ID =- 1 0A ) RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss:C iss = 1210 pF (TYP.) Built-in gate protection diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit D r a i nt os o u r c ev o l t a g e V DSS -60 V Gate to source voltage (AC) V GSS 20 V Gate to source voltage (DC) *1 V GSS -20 V Drain current (DC) I D 20 A Drain current(pulse) *2 I D 80 A Power dissipation T A=25 PD 1.5 W TC=25 PD 70 W Channel temperature T ch 150 Storage temperature T stg - 5 5t o+ 1 5 0 Channel to Case R th(ch-C) 1.79 /W Channel to Ambient R th(ch-A) 83.3 /W *1 f = 20 kHz, Duty Cycle10% (+Side) *2P W 10 s; d 1%.
www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=-10mA,VGS=0 -20 V Gate to source breakdown voltage V GSS IG= 200 A, VDS=0 10 V Drain cut-off current I DSS VDS=-60V,VGS=0 -10 A Gate leakage current I GSS VGS= 20V,VDS=0 10 A Gate to source cutoff voltage V GS(off) VDS=-10V,ID=-1mA -1.0 -1.5 -2.0 V Forward transfer admittance Yfs VDS=-10V,ID=-10A 5.0 12 S VGS=-10V,ID=-10A 70 100 m VGS=-4.0V,ID=-10A 120 185 m Input capacitance C iss 1210 pF Output capacitance C oss 520 pF Reverse transfer capacitance C rss 180 pF Turn-on delay time t d(on) 16 ns Rise time t r 140 ns Turn-off delay time t d(off) 90 ns Fall time t f 80 ns Drain to source on-state resistance R DS(on) VDS=-10V,VGS=0,f=1MHZ VDD=-30V,VGS(on)=-10V,ID=--10A ,RG=10 2SJ492