2SJ461-3 KEXIN

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www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ461 ■ Features

VDS (V) =-50V
ID =-0.1 A
RDS(ON) ＜ 50Ω (VGS =-4V)
RDS(ON) ＜ 100Ω (VGS =-2.5V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -50 Gate-Source Voltage VGS ±7 Continuous Drain Current ID -0.1 Pulsed Drain Current （Note.1) IDM -0.2 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10 ms, duty cycle ≤ 1% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -50 V Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V -1 uA Gate-Body leakage current IGSS VDS=0V, VGS=±7V ±3 uA Gate to Source Cutoff Voltage VGS(off) VGS=-3V ID=-1mA -0.7 -1.3 V VGS=-4V, ID=-10mA 50 VGS=-2.5V, ID=-3mA 100 Forward Transconductance gFS VDS=-3V, ID=-10mA 12 mS Input Capacitance Ciss 6 Output Capacitance Coss 9 Reverse Transfer Capacitance Crss 1.6 Turn-On DelayTime td(on) 32 Turn-On Rise Time tr 270 Turn-Off DelayTime td(off) 45 Turn-Off Fall Time tf 130 Static Drain-Source On-Resistance RDS(On) Ω pF ns VGS(on)=-3V, ID=-20mA, RL=200Ω,RG=10Ω,VDD=-3V VGS=0V, VDS=-3V, f=1MHz ■ Marking Marking H19 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1. Gate 2. Source 3. Drain

www.kexin.com.cn2 MOSFE T P-Channel MOSFET 2SJ461 ■ Typical Characterisitics

www.kexin.com.cn 3 MOSF ET P-Channel MOSFET 2SJ461 ■ Typical Characterisitics