2SJ461 NEC
Document overview
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Technical content
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ461 is a switching device which can be driven directly by a PACKAGE DRAWINGS 2.5 V power source. (in millimeter) The MOS FET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits. 2802 By 15 0.65%345 - FEATURES = © Can be driven by a 2.5 V power source. ol lid 1 © Not necessary to consider driving current because of its high input Si S, +. i impedance. a a | [3-3 © Possible to reduce the number of parts by omitting the bias resistor. f=] 4 ABSOLUTE MAXIMUM RATINGS (Ta = +25 °C) © Markin Drain to Source Voltage Voss -50 Vv +2 Fe Gate to Source Voltage Voss 77.0 Vv 5 © Drain Current (DC) lvoc ¥0.1 A = 2 Drain Current (pulse) Ioipuise) = F0.2* =A Ss Total Power Dissipation Pr 200 mW S| Channel Temperature TcH 150 °c Storage Temperature Tsg 55 to +150 °C EQUIVALENT CIRCUIT *PW $10 ms, Duty cycle $ 1% 1. Source Drain(D) 2. Gate 3. Drain - Gate(G) Source(S) (Diode in the figure is the parasitic diode.) Marking : H19 The diode connected between the gate and source of the transistor serves as a protector against ESD. When _ this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ~~ Document No. D10730EJ3V0DS00 (3rd edition) Date Published April 1996 M Printed in Japan . © NEC Corporation 1995
ELECTRICAL CHARACTERISTICS (Ta = +25 °C) ~ [_cuaracrensnic ——[ svmeor_[ wn. [ TWr | wax [ ont | TeSTCONDTIONS | [Braincurortcurent ws] to | WA | vennnsovverno pO a [cate curotvonase | Vesa | 07 [08 [13 |v _ | von=-20v,p- 10a | [Forward Tansteraamivance | Tyel | [|_| mS] Wonn-a0V.b--10ma_| | brain o Source OnSite Ressnce | Roses |_| | wo | | Vora-25V,=-3ma_| [brane Source On state fesitace | fosous | | 1 | 80 | a] Vos=-40V.--10ma_| | oupucopectance i me | | [sctine eae
WS TYPICAL CHARACTERISTICS (Ta = 25 °C) we, DERATING FACTOR OF FORWARD BIAS: DRAIN CURRENT vs. SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE s 80 NI < 80 =} 4 —— g 60 NX Pa 60 a —_ [Ves=-4.0V] & ge Tt COE Pee 8 rn 4 -—| || N\\ - ° — a oF | i) 30 60 90 120 150 0 a 2 3 4 5 Ta- Ambient Temperature -C Vos - Draint to Source Voltage - V Ww ‘TRANSFER CHARACTERISTICS BRAIN cuaneNY ADMITTANCE vs. 0 == Ses 2 Nes SSS ae SS eae Peseta esei eet <” eae’ Jae 2 =H Het Ht Hill Ht E Has 125°C € 100 i Ht ac Aaa ee Sees || SS S Sop ls28 eee Tl
8 BU EN
© o1 Pol ee eS N wy 50 SS eS © 10 A Mn Oe | 5 a equi el eee fA ese = —— s Goer +f in tt ooo Lt ME @ Al ll Il ° 08 16 24 3.2 40 0.1 a 10 100 1000 Ves - Gate to Source Voltage - V Io - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. New 9 DRAIN CURRENT a DRAIN CURRENT g 100 il g 80 mT WTI e Vos=-2.5V 2 Vos=-4V | il ] li eee lll) Ba bam goo Ramen TIT IH | 2 w mal 2 00 Ve RS all ee AT 6 | 5 5 t Tit omnia) bo tte Hy ll SO | 3 cima mui g Cite ssey Hy > ° - i jo LUA tte Ll a Otte I Ee 01 A “10 -100 -1000 2° 01 a =10 -100 -1000 Ip - Drain Current - mA fo - Drain Current - mA sa ——A
DRAIN CURRENT vs. CAPACITANCE vs. o DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE VOLTAGE g 80 100 ES SS Sy a Wie FS 3 70 % tt Sy é || | | : SeRIUEITEaEna EEL | eens ee | 3 80 — Bo oe 3 oS SE Fae a 5 «0 & SE tie Jar SS
8 Na 3 Se
po te 1 » ees TTT « 0 2 4 6 8 -10 1 -10 -100 Ves - Gate to Source Voltage -V Vbs - Drain to Source Voltage -V VY SOURCE TO DRAIN DIODE SWITCHING CHARACTERISTICS FORWARD VOLTAGE 1000 pr — ro pn 9000 eS i ES cee | 73 aa atta ican nanan 2 100 Lf ee 2 7 i? == SS foie i) =? eee § ope we Lt g so LJ
6 SES SEE ee 6 ES SS SSS \\
: tae FE ee oe ~ ) Ses oot } Go g EF TT ieee Ty 5 UE Se Sa 3 3 =, rr 10 - 0.1 es a ee 10 -100 -1000 04 0.6 08 1.0 2 14 'o- Draint Current - mA Vs0 - Source to Drain Voltage - V ww Za
~ NEC semiconductor device reliability/quality control system TEI-1202 Semiconductor device mounting technology manual C10535EJ7VOIFOO Guide to quality assurance for semiconductor devices MEI-1202
[MEMO] ~ No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual ~ property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on - a customer designated “quality assurance program” for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) - Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product: Ma 94.11 te