2SJ461 KEXIN
Document overview
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Technical content
Features
Can be driven by a 2.5V power source. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the bias resistor. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit D r a i nt os o u r c ev o l t a g e V DSS -50 V Gate to source voltage V GSS 7.0 V Drain current (DC) I D 0.1 A Drain current(pulse) * I D 0.2 A Power dissipation P D 200 m W Channel temperature T ch 150 Storage temperature T stg -55 to +150 *P W 10 s; d 1%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V DSS ID=-10mA,VGS=0 -20 V Gate to source breakdown voltage V GSS IG= 200 A, VDS=0 10 V Drain cut-off current I DSS VDS=-50V,VGS=0 -100 A Gate leakage current I GSS VGS= 7.0V,VDS=0 10 A Gate to source cutoff voltage V GS(off) VDS=-3.0V,ID=-1 A -0.7 -0.9 -1.3 V Forward transfer admittance Yfs VDS=-3.0V,ID=-10mA 12 ms VGS=-2.5V,ID=-3mA 46 100 VGS=-4.0V,ID=-10mA 31 50 Input capacitance C iss 6p F Output capacitance C oss 9p F Reverse transfer capacitance C rss 1.6 pF Turn-on delay time t d(on) 32 ns Rise time t r 270 ns Turn-off delay time t d(off) 45 ns Fall time t f 130 ns Drain to source on-state resistance R DS(on) VDS=-3.0V,VGS=0,f=1MHZ VDD=-3.0V,VGS(on)=-3.0V,ID=--20mA RL=200 ,RG=10 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain