2SJ421 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Low ON resistance. + Very high-speed switching. + 4V drive. Absolute Maximum Ratings at Ta= 25°C. unit Drain-to-Source Voltage Vpss -30 v Gate-to-Source Voltage Voss £20 Vv Drain Current (DC) Ip -5 A Drain Current (Pulse) Ipp PWS 10ygs, duty cycleS1% —32 A Allowable Power Dissipation Pp Mounted on ceramic board 2.0 WwW (1000mm?x 0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Viarypss Ip=—1mA,Vgs=0 -30 Vv Zero-Gate Voltage Ipss Vps= —30V,Vgs=0 -100 ywA Drain Current Gate-to-Source Leakage Current Igsg Vos= +16V,Vps=0 £10 pA Gate-to-Source Cutoff Voltage Vgsiom Vps=—10V,Ip=—1mA -1.0 -2.5 V Forward Transfer Admittance | Ys! Vpg=—10V,Ip=—5A 6 10 Ss Static Drain-to-Source Rpsionl = Ip=—5A,Vgs= —10V 45 58 mQ ON-State Resistance Rpsion)2 Ip=—2A,Vgs= —4V 65 107 mQ Input Capacitance Ciss Vps= —10V, f=1MHz 1000 pF Output Capacitance Coss Vps= —10V, f=1MHz 800 pF Reverse Transfer Capacitance Crss Vps= — 10V, f=1MHz 240 pF Turn-ON Delay Time tacon) See specified Test Circuit. 25 ns Rise Time tr ” 140 ns Turn-OFF Delay Time tavom 4 350 ns Fall Time te ° 300 ns Diode Forward Voltage Vsp Igs=—5A,Vas=0 -1.0 -12 V Switching Time Test Circuit Vpp=-15V Package Dimensions 2116 ow" ? (unit : mm) -sov U Ip=-5A “ong vin RL =30 <a De. 4x op —* our 1: Source Too A 2: Source OU ie 3:Source Ps {2.03 4: Gate @ 2Ss424 - 14 5:Drain —s| 6: Drain ao | 1: Drain osos| | [327 X 8: Drain ° SANYO: SOP8 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 42895YK (KOTO) TA-0191 No.5077-1/3

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2 a a | Fl ims AS a 3 ra & {Operation in thisarea So] "P pe ETT TTT limited Rosey | KET tT @ vo Loste TNT Ploy Pe Ta= 25 loCeTt x a “pa{Sinale pulse IW 1 1.0 . 10 10 10 Drain Current,Ip ~ A Drain-to-Source Voltage,Vps — V Pp - Ta 24 D eo 20) dy gts) IS Ney ay Sey pit i Re 8 12 IS 6, S 8, Eos Cn, 2 Q = 22 g nto. -L i] Td % 20 a oO 80 wo 20 140 160 Ambient Temperature,Ta ~°C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Ml Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Hi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provide information as of April, 1995, Specifications and information herein are subject to change without notice, No.5077-3/3