2SJ420 SANYO

Document overview

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Technical content

Features

+ Low ON resistance. + Ultrahigh-speed switching. + 2.5V drive. Absolute Maximum Ratings at Ta=25°C. unit Drain-to-Source Voltage Voss —12 Vv Gate-to-Source Voltage Vass +10 Vv Drain Current (DC) Ip 5 A Drain Current (Pulse) Ipp PW<£10ps, duty cycleS1% —32 A Allowable Power Dissipation Pp Mounted on a ceramic board 2.0 Ww (1000mm? X 0.8mm) Channe] Temperature Tch 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit D-S Breakdown Voltage Veerypss Ip=—1mA,Vgs=0 -12 Vv ‘Zero-Gate Voltage Ipss_ - Vps= —10V,Vgg=0 100 pA Drain Current Gate-to-Source Leakage Current Iggs Voes=+8V,Vps=0 +10 A Cutoff Voltage Vasom Vps=—6V,Ip=—1mA —0.4 -14 V Forward Transfer Admittance | ¥¢s| Vpgs=—-6VIp=—5A 8 12 Ss Static Drain-to-Source Rps(on)t Ip=—5A,Vgs=—4V 50 63 mQ ON-State Resistance Rps(on)2 Ip=—2A,Vgg=—2.5V 70 108 mQ Input Capacitance Ciss Vps= —6V, f=1MHz 1200 pF Output Capacitance Coss Vps= — 6V, f=1MHz 1100 pF Reverse Transfer Capacitance Crss Vps= —6V, f=1MHz 400 pF Turn-ON Delay Time taion) See specified Test Circuit. 25 ns Rise Time ty ” 150 ns Turn-OFF Delay Time taco y 150 ns Fall Time te ” 180 ns Diode Forward Voltage Vsp Is=—5A,Vgs=0 -10 -12 V Switching Time Test Circuit Vpo=-6v Package Dimensions 2116 vin 9 (unit : mm) ay 0 Ips-SA *ooo0 Vin AL=4,20 shots : ee “ a | 1: Source saa 2:Source Wo 0 3: Source P.G fp. 4: Gate 5: Drain ww eauazo - + 6: Drain 7: Drain Q! Zz 8: Drain SANYO : SOP8 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 72297TS (KOTO)/31495MO (KOTO) TA-0159 No.5064-1/3

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0.4 Os O6 07 oe 09 1.0 ww ° 2 “6 “6 “8 +10 12 a4 Diode Forward Voltage,Vgp — V Drain-to-Source Voltage, Vpg — V inde Forward Votage ven =V" " ? enna Satre Voltage, Ugg — VS No.5064-2/3

' te Se < 40h es hs De g a) nai > E 100 4 I 1 Operation in this tho S pf Tt er BF aSLarea is limited by Rosonr TT | i A OD 7 neo PSY Ey B 4 “Fon ry ett ity | gy Pee TT] Fe ee coe ee a oe es | g0y awe, ( 3 4 &é st 2a es 5 po tT erin tt Ives=—avf-_ Pf {J ps{Sinatepuise | | || [md | “O01 2 “10 TA0 EJ S740 2 a 57 40 2 Drain Current, Ip — A Drain-to-Source Voltage, Vps — V Pp - Ta 24 2. 120 oj io a gis ee Plt te Baa ee Lea, Fo | | | RT 5 08 < & Qa gt RL $ 04! No, JSeeeeeh: t) IN Sa G0 Ambient Temperature,Ta — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and titigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1997, Specifications and information herein are subject to change without notice, No.5064-3/3