2SJ418 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SJ418] 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 5.0 6.5 0.85 0.7 0.6 1.55.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 2.3 2.3

No.5298–2/4 Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Tc=25˚C Switching Time Test Circuit PW ≤10µs, duty cycle≤1% 50ΩP.G 2SJ418 S G D VOUT VDD =— 15V VIN ID =— 4A R L=3.75Ω PW=10s D.C.≤1% VIN — 10V retemaraPl obmySs noitidnoCs gnitaRt inU egatloVecruoS-ot-niarDV SSD 03– V egatloVecruoS-ot-etaGV SSG 02±V )CD(tnerruCniarDI D 8– A )esluP(tnerruCniarDI PD 23– A noitapissiDrewoPelbawollAP D 0.1W 03W erutarepmeTlennahCh cT 051 erutarepmeTegarotSg tsT 051+ot55– retemaraPl obmySs noitidnoC sgnitaR tinU nimp ytx am egatloVnwodkaerBecruoS-ot-niarDV SSD)RB( ID V,Am1–= SG 0=0 3– V tnerruCniarDegatloVetaG-oreZI SSD V SD V,V03–= SG 0=0 01– Aµ tnerruCegakaeLecruoS-ot-etaGI SSG V SG V,V61±= SD 0=0 1±A µ egatloVffotuCV SG )ffo(V SD I,V01–= D Am1–=0 .1– 5.2– V ecnattimdArefsnarTdrawroF| sfy|V SD I,V01–= D A4–=3 7 S ecnatsiseRetatS-nOecruoS-ot-niarDcitatS R SD 1)no(I D V,A4–= SG V01–=0 60 8m Ω R SD 2)no(I D V,A4–= SG V4–=5 015 41m Ω ecnaticapaCtupnIs siCV SD zHM1=f,V01–=0 08F p ecnaticapaCtuptuOs soCV SD zHM1=f,V01–=0 05F p ecnaticapaCrefsnarTesreveRs srCV SD zHM1=f,V01–=0 41F p emiTyaleDNO-nruTt )no(d tiucriCtseTdeificepseeS5 1s n emiTesiRt r tiucriCtseTdeificepseeS0 6s n emiTyaleDFFO-nruTt )ffo(d tiucriCtseTdeificepseeS0 71s n emiTllaFt f tiucriCtseTdeificepseeS0 9s n egatloVdrawroFedoiDV DS IS V,A8–= SG 0=0 .1– 2.1– V Marking : J418

No.5298–3/4 ID -VDS ID -VGS R DS(on) -VGS Tc=25°C ID =-4A V DS =-10V 23 5 7 23 5 7 23 5 7 23 -12 -16 -10 -14 0.01 0.1 1.0 100 160 100 120 140 V DS =-10V V GS =-2.5V -10.0V -6.0V -4.0V -3.0V -3.5V -8.0V Tc= -25 Tc=-25°C 25°C 75°C yfs -- ID Drain Current, ID – A Drain-to-Source Voltage, VDS – V Drain Current, ID – A Forward Transfer Admittance, |yfs |– S Drain Current, ID – A Gate-to-Source Voltage, VGS – V Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – m Ω SW Time - ID 23 5 7 237 Ciss,Coss,Crss-VDS f=1MHz 100 1000 10000 R DS(on) -Tc IF -VSD -0.01 140 120 02 0-20-40-60 40 60 80 100 120 160 140 160 100 -0.01 -0.1 -1.0 -10 1000 100 ID=-4A,V GS=-4V ID =-4A,V GS =-10V V GS =0 Tc= -25 V DD =-15V VGS =-10V Ciss Coss Crss td(on) tr td(off) tf Switching Time, SW Time– ns Drain Current, ID – A Ciss, Coss, Crss– pF Drain-to-Source Voltage, VDS – V Forward Current, IF – A Diode Forward Voltage, VSD – V Static Drain-to-Source On-State Resistance, RDS(on) – m Ω Case Temperature, Tc–˚ C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. 2SJ418 PS No.5298–4/4 100 µs A S O P D - Ta 52357 57 2 3-1.0 -10 -1.0 -10 20 60 40 80 120 100 140 16000 0.4 0.2 0.6 1.0 0.8 1.2 P D - Tc 20 60 40 80 120 100 140 16000 ID =-8A ID =-32A Operation in this area is limited by RDS (on). 10ms 1ms 10µs DC operation Drain Current,ID – A Drain-to-Source Voltage, VDS – V Tc=25°C Single pulse Allowable Power Dissipation, PD – W Ambient Temperature, Ta–˚ C Allowable Power Dissipation, PD – W Case Temperature, Tc–˚ C