2SJ416 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
- Low ON-resistance. + Ultrahigh-speed switching. - 4V drive. Absolute Maximum Ratings at Ta=25°C unit Drain-to-Source Voltage Vpss -30 Vv Gate-to-Source Voltage Vass +20 Vv Drain Current(DC) Ip ~—2 A Drain Current(Pulse) Ipp PWS 10us, duty cycleS1% —8 A Allowable Power Dissipation Pp Mounted on ceramic board 15 WwW (250mm? x 0.8mm) Te=25°C 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Viprypss Ip=—1mA,Vgs=0 —30 Vv Zero-Gate Voltage Ipss Vps=—30V,Vgg=0 -100 pA Drain Current Gate-to-Source Leakage Current Igss Vos= +16V,Vps=0 +10 pA Cutoff Voltage Ves Vpos=—10V,Ip=—1mA -1.0 -25 V Forward Transfer Admittance | ¥tel Vpg=—10V,Ip=—-1A 12 2.0 Ss (Satie Drain-to-Source Rpson) Ip=~1A,Vgs=—10V 310 440 mQ ON-State Resistance Rpsion) Ip=—14,Vgs=—4V 480 650 mQ Input Capacitance Ciss Vpsg = —10V,f=1MHz 170 pF Output Capacitance Coss Vps= —10V,f=1MHz 120 pF Reverse Transfer Capacitance Cras Vps=—10V,f=1MHz 30 pF Turn-ON Delay Time ta(on) See specified Test Circuit. 10 ns Rise Time ty a 20 ns Turn-OFF Delay Time ta(offy ” 110 ns Fall Time tt ” 15 ns Diode Forward Voltage Vsp Ig=—2A,Vas=0 -10 -12 V Marking : JJ Switching Time Test Circuit Package Dimensions 2062A Vpp=— 15V (unit : mm) 4S 15 pee ov Vin penta -sov LE RL=150 ai Your a4 Vin D 7 PW=10 4s $e ts Dos 1% 6 PG g) 2 30 cy AR 289416 1: Gate 3: Source (Bottom View) SANYO : PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 40196TS (KOTO) TA-0319 No.5266-1/3
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