2SJ415 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

  • Low ON-state resistance.
  • Low-voltage drive.
  • Surface mount type device making the following possible.
  • Reduction in the number of manufacturing processes for 2SJ415-applied equipment.
  • High density surface mount applications.
  • Small size of 2SJ415-applied equipment. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -60 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -10 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -40 A Allowable Power Dissipation P D Tc=25°C3 5 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=-- 1mA, VGS=0V - -60 V Gate-to-Source Breakdown Voltage V (BR)GSS IG=±100μA, VDS=0V ± 20 V Zero-Gate Voltage Drain Current I DSS V DS=- -60V, VGS=0V - -100 μA Gate-to-Source Leakage Current I GSS VGS=±16V, VDS=0V ± 10 μA Cutoff Voltage V GS(off) V DS=--10V, ID=--1mA - -1.0 - -2.0 V Continued on next page. 22410QA TK IM TA-0185 SANYO Semiconductors DATA SHEET 2SJ415 P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. 5418-2/3 Continued from preceding page. Parameter Symbol Conditions Ratings Unit min typ max Forward Transfer Admittance | yfs | VDS=--10V, ID=-- 5A 4.0 7.5 S Static Drain-to-Source On-State Resistance RDS(on)1 I D=-- 5A, VGS=--10V 110 150 mΩ RDS(on)2 I D=-- 5A, VGS=--4V 150 200 mΩ Input Capacitance Ciss V DS=- -20V, f=1MHz 1230 pF Output Capacitance Coss V DS=- -20V, f=1MHz 390 pF Reverse Transfer Capacitance Crss V DS=- -20V, f=1MHz 100 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 16 ns Rise Time tr See speci fi ed Test Circuit. 40 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 230 ns Fall Time tf See specifi ed Test Circuit. 150 ns Diode Forward Voltage VSD IS=- -10A, VGS=0V - -1.0 - -1.5 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7002-001 6.2 7.8 8.2 0.2 0.44.2 1.0 1.0 5.08 2.542.54 8.4 10.0 1.2 0.3 0.6 0.6 0.7 7.8 5.2 6.210.0 6.0 2.5 1 2 1 : Gate 2 : Source 3 : Drain SANYO : ZP PW=10μs D.C.≤1% P. G 50Ω G S D ID= --5A RL=6Ω VDD= --30V VOUT 2SJ415 VIN --10V VIN PD -- Tc IT06736 20 40 80 100 120 140 160 Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W

No. 5418-3/3 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 2SJ415 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.