2SJ406 SANYO
Document overview
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Technical content
Specifications and information herein are subject to change without notice. 990929TM2fXHD Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain Current (Pulse) Channel Temperature Storage Temperature Allowable power Dissipation V V A A W Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Gate to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Static Drain to Source on State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-oFF Delay Time Fall Time Diode Forward Voltage Switching Time Test Circuit Elecrical Connection VDSS VGSS ID IDP PD Tch Tstg TENTATIVE PW ≤10µS, dutycycle≤1% Tc=25°C unit Forward Transfer Admittance Features and Applications
- Low ON-state resistance.
- Very high-speed switching.
- Low-voltage dreve.
- Micaless package facilitating easy mounting. SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN - -200 ±20 - -12 - -48 150 - -55 to +150 min - -200 ±20 - -100 ±10 V V µA µA - -1.5 V S m Ω pF pF pF ns ns ns ns - -2.5 6.3 10.5 170 2400 540 260 120 720 310 - -1.0 V 230 - -1.5 V(BR)DSS V(BR)GSS ID=- -1mA , VGS=0 ID=±100µA , VGS=0 IDSS VDS=- -200V , VGS=0 IGSS VGS= ±16V , VDS=0 VGS(OFF) VDS=- -10V , ID=- -1mA | yfs | VDS=- -10V , ID=- -6A RDS(On)1 ID=- -5A , VGS=- -4V Ciss VDS=- -20V , f=1MHz Coss VDS=- -20V , f=1MHz Crss VDS=- -20V , f=1MHz td(On) tr td(Off) tf VSD IS =- -1.0A , VGS = 0 Case Outline See Specified Test Circuit . 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications typ max unit 50ΩP.G S G D VOUT VDD=- -100V VIN ID=- -6A RL=- -16.7Ω PW=10uS D.C ≤1% VIN - -10V 2SJ406 TO-220 (unit:mm) 1 : Gate 2 : Drain 3 : Source 1.6 1.2 0.75 14.0 16.0 10.0 18.1 5.6 φ3.2 7.2 3.5 2.552.55 2.4 4.5 2.8 0.7 2.552.55 2.4 1 23