2SJ3501 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
www.kexin.com.cn 1 MOSFETSMD Type P-Channel MOSFET 2SJ3501 SOT-523 mm :tinU 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1.6+0.15 -0.15 0.3±0.05 0.5+0.1 -0.1 0.75+0.05 -0.05 0.8±0.1 0.15±0.05 0.8+0.1 -0.1 0.36±0.1 1. Gate 2. Source 3. Drain 0.55 (REF.) ■ Features
- VDS (V) = -50V
- ID =-130 mA
- RDS(ON) ＜ 10Ω (VGS =-5 V)
3 Drain
■ Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Rating Unit Drain-Source Voltage VDS -50 Gate-Source Voltage VGS ±20 Continuous Drain Current @ TA = 25°C ID -130 Pulsed Drain Current (tp ≤ 10 μs) IDM -520 Power Dissipation PD 150 mW Thermal Resistance.Junction- to-Ambient RthJA 833 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃/W mA
www.kexin.com.cn2 MOSFETSMD Type P-Channel MOSFET 2SJ3501 ■ Electrical Characteristics (Ta = 25℃) Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -50 V VDS=-25V, VGS=0V -0.1 VDS=-50V, VGS=0V -15 VDS=-50V, VGS=0V, TJ=125℃ -60 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±10 Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -0.8 -2.0 V Static Drain-Source On-Resistance RDS(On) VGS=-5V, ID=-100mA 10 Ω Forward Transconductance gFS VDS=-25V, ID=-100mA, f=1.0kHz 50 mS Input Capacitance Ciss 30 Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Gate Charge QT 6000 pC Turn-On DelayTime td(on) 2.5 Turn-On Rise Time tr 1 Turn-Off DelayTime td(off) 16 Turn-Off Fall Time tf 8 Maximum Body-Diode Continuous Current IS -0.13 Pulsed Current ISM -0.52 Diode Forward Voltage (Note 2.) VSD IS=-0.13A,VGS=0V -1.2 V Note 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. A ns Zero Gate Voltage Drain Current IDSS VDD = –15 V, ID = –2.5 A,RL = 50Ω VGS=0V, VDS=-5V pF μA ■ Marking Marking PD
www.kexin.com.cn 3 MOSFETSMD Type P-Channel MOSFET 2SJ3501 FIG.3 On-Resistance versus Drain Current FIG.4 On-Resistance versus Drain Current RDSon, Drain-to-Source Resistance (Ω) ID, Drain Current (A) VGS=4.5V Tj=25℃ VGS=4.5V Tj=150℃ VGS=4.5V Tj=-55℃ VGS=4.5V RDSon, Drain-to-Source Resistance (Ω) ID, Drain Current (A) VGS=10V Tj=25℃ VGS=10V Tj=150℃ VGS=10V Tj= -55℃ VGS=10V ■ Typical Characterisitics FIG.1 Transfer Characteristics FIG.2 On-Region Characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ID, Drain Current (A) VGS, Gate - Source Voltage (V) VDS=10V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 1 2 3 4 5 6 7 8 9 10 ID, Drain Current (A) VDS, Drain - Source Voltage (V) VGS=2.25V VGS=2.5V VGS=2.75V VGS=3V VGS=3.25V VGS=3.5V TJ=25℃ 25℃ 150℃ -55℃
www.kexin.com.cn4 MOSFETSMD Type P-Channel MOSFET 2SJ3501 FIG.5 On-Resistance Variation with Temperature FIG.6 Body Diode Forward Voltage -55 -30 -5 20 45 70 95 120 145 RDSon (℃) Tj (℃) VGS=4.5V ID=0.13A VGS=10V ID=0.52A 0.001 0.01 0.1 ID (V) VSD (V) 150℃ -55℃ 25℃