2SJ308 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Low ON resistance. - Very high-speed switching. + Low-voltage drive. + Micaless package facilitating mounting. Absolute Maximum Ratings at Ta= 25°C unit Drain to Source Voltage Vpss —250 Vv Gate to Source Voltage Voss +30 v Drain Current(DC) Ip -9 A Drain Current(Pulse) Ipp PWS 10ygs, duty cycleS1% —36 A Allowable Power Dissipation Pp 20 W Te=25°C 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta= 25°C min typ max unit D-S Breakdown Voltage Vierpss Ip=—1mA,Vgs=0 — 250 v G-S Breakdown Voltage Visrass Ig=+100zA,Vps=0 £30 Vv [Ze Gate Voltage Ipss Vps= — 250V,Vgs=0 -100 pA Drain Current Gate to Source Leakage Current Iggg Vos= £25V,Vps=0 +10) pA Cutoff Voltage Vesom Vps=—10V,Ip=—1mA -15 -2.5 v Forward Transfer Admittance | ¥—1 Vps=-10V,Ip=—5A 6 10 s [Seasic Drain to Source Rpswon) Ip=—5A,Vgs=—10V 0.35 048 Oa on State Resistance Input Capacitance Ciss Vps= —20V,f= 1MHz 2700 pF Output Capacitance Coss Vps= —20V,f= 1MHz 500 pF Reverse Transfer Capacitance Crss Vps= -— 20V,f=1MHz 225 pF Turn-ON Delay Time tavon) See specified Test Circuit. 40 ns Rise Time tr % 15 ns Turn-OFF Delay Time taom ” 320 ns Fall Time te * 260 ns Diode Forward Voltage Vsp Is= —9A,Vgg=0 -10 -15 Vv Switching Time Test Circuit Package Dimensions 2063 Vpos-s00v (unit: mm) 4 — 46.0. %.0 2 van 7 us 32? Ts v: in AL=200 T - SS cxm- S § LP Ser ry ¢ %.1— ore PG Gh) o 7.244 S: Source © Lossoa 25 ar BBrain “| SANYO: TO-220ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 53093TH (KOTO) AX-9095 No.4318-1/3
ip — Ves 7 — “185 | | e+ “fT ] f wi) ete i 2 / a oo & /| 4 7 “PE el EE ‘ ou tag yf © "Gate to Source Voltage,Vgs — V ° Drain to Source Voltage,Vpg — owe Yea _. aT Dee i — F 2, py ro ZETEN TS (iias aislimi PL a5 oo” z Ze | el] LA 2, | 4 A Coe H Sinnen PLATE) ' A COE as Pt Edt | Po =| “10-12 “4 16 Hee eH 4 Gate to Source Voltage Vgg = V mos Drain Currently — A esr Yeah : Ros(on) ~ Te , eas -_ LETT === i % Nene eee A heal WL i poy SE . ri Poe : er ) FECES # 0.4] Hl] tr] [| | VEER ER ai pT -24 -28 ~-32 - “0 “0 4 “t hea ne 60 ° ~* Drain to Source Vellage: Ve V ” ° Case Temperature,Te — °C. ng _ fy fee ee < ESS Rg SS e ee i Loe Spertion " iS Sim Ht Ho F Pei SRR Senin i ne i PONS ST eS SSH F 2 ro SW I J & 3 a POR * Tee a | CPT Aas ; COU “Baia WH Sra “ “0 Drain to Source Voltage.Vng 'V Drain Currently — A —
- Pp - Te ee Po Ta 50 D ' 20 a a oe 3 : a Pa N Fo | | | RTT | oe NI Bos N é 2 a ¥ o4 ss 3" NX a a 9 20 40 «60 «480 «1M 120 140 160 Ambient Temperature,Ta —°C Case Temperature,Te — °C I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and ail their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no Guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of . third parties, No.4318-3/3