2SJ3053DV KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 4

Technical content

www.kexin.com.cn 1 MOSFETSMD Type P Channel MOSFET 2SJ3053DV +0.2 -0.1 1 2 3 456 Unit: mm 1.6 +0.2 -0.12.8 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.1 -0.1 SOT-23-6( ) +0.01 -0.01 +0.2 -0.1 0.4-0.1 +0.1 ■ Features

  • Surface Mount Package
  • Super High Density Cell Design for Extremely Low RDS(on)
  • Exceptional On-resistance and Maximum DC Current Capability ■ Absolute Maximum Ratings (Ta = 25°C, unless otherwise noted) Symbol Rating Unit VDS -150 VGS ±20 ID -1.4 IDM -5 PD 0.35 W RthJA 357 ℃/W TJ 150 Tstg -55 to 150 Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 Note 1.Surface mounted on FR4 board using the minimum recommended pad size. A Junction Storage Temperature Range Junction Temperature Continuous Drain Current (Note 1) Power Dissipation Thermal Resistancefrom Junction- to-Ambient (Note 1) V Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current (tp=10us)

1 Drain 4 Source

2 Drain 5 Drain

3 Gate 6 Drain

www.kexin.com.cn2 MOSFETSMD Type P Channel MOSFET 2SJ3053DV ■ Electrical Characteristics (Ta = 25°C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -150 V Zero Gate Voltage Drain Current IDSS VDS=-120V, VGS=0V -1 μA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage (Note 2) VGS(th) VDS=VGS , ID=-250μA -2 -3 V VGS=-10V, ID=-1.4A 800 VGS=-6V, ID=-1A 850 Forward Transconductance (Note 2) gFS VDS=-10V, ID=-1.4A 4.5 S Diode Forward Voltage VSD IS=-1A,VGS=0V -1.2 V Input Capacitance Ciss 520 Output Capacitance Coss 30 Reverse Transfer Capacitance Crss 20 Total Gate Charge Qg 10 15 Gate Source Charge Qgs 2.5 Gate Drain Charge Qgd 5 Turn-On Delay Time td(on) 10 20 Turn-On Rise Time tr 12 25 Turn-Off Delay Time td(off) 30 60 Turn-Off Fall Time tf 12 25 Note 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. mΩRDS(On) Static Drain-Source On-Resistance (Note 2) VGS=0V, VDS=-50V, f=1MHz VGS=-6V, VDS=-75V, ID=-1A ns pF nC VGEN=-10V,VDD=-75V, RL=75Ω, ID=-1A,RG=1Ω Dynamic Characteristics (Note 4) Switching Characteristics (Note 3, 4) ■ Marking Marking 39W**

www.kexin.com.cn 3 MOSFETSMD Type P Channel MOSFET 2SJ3053DV ■ Typical Characterisitics

www.kexin.com.cn4 MOSFETSMD Type P Channel MOSFET 2SJ3053DV