DATASHEET SEARCH SITE
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Features
VDS (V) = -30V ID =- 2 . 6A( VGS = -10V) RDS(ON) < 130m (VGS =- 1 0 V ) RDS(ON) < 200m (VGS =- 4 . 5 V ) Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatloVecruoS-niarD DS -30 V VegatloVecruoS-etaG GS 20 V Continuous Drain Current T A=25 -2.6 TA=70 -2.2 ItnerruCniarDdesluP DM -20 Power Dissipation T A=25 1.4 TA=70 1 Themal Resistance. Junction-to-Ambient R thJA 125 /W Themal Resistance. Junction-to-Case R thJC 80 /W Junction and Storage Temperature Range T J,T STG - 5 5t o1 5 0 ID PD A W 6-'6 *DWH 6RXUFH 'UDLQ 8QLW PP627 1.6 P-Channel Enhancement MOSFET G D S
www.kexin.com.cn MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min Typ Max Unit Drain-Source Breakdown Voltage V DSS ID=250 A, VGS=0V -30 V VDS=-24V, VGS 1-V0= VDS=-24V, VGS=0V ,TJ=55 -5 Gate-Body leakage current I GSS VDS=0V, VGS= 20V 100 nA Gate Threshold Voltage V GS(th) VDS=VGS ID=-250 A -1 -1.9 -3 V VGS=-10V, ID 03179A6.2-= VGS=-10V, ID=-2.6A T J=125 135 150 VGS=-4.5V, ID 002661A2-= m ItnerrucniardetatsnO D(ON) VGS=-4.5V, VDS A5-V5-= Forward Transconductance g fs VDS=-5V, ID S8.33A5-= CecnaticapaCtupnI iss 302 370 pF CecnaticapaCtuptuO oss 50.3 pF Reverse Transfer Capacitance C rss 37.8 pF RecnatsiseretaG g VGS=0V, VDS 8121zHM1=f,V0= Total Gate Charge (10V) 6.8 9 nC Total Gate Charge (4.5V) 2.4 nC QegrahCecruoSetaG gs 1.6 nC QegrahCniarDetaG gd 0.95 nC temiTyaleDnO-nruT D(on) 7.5 ns temiTesiRnO-nruT r 3.2 ns temiTyaleDffO-nruT D(off) 17 ns temiTllaFffO-nruT f 6.8 ns Body Diode Reverse Recovery Time t rr IF=-2.6A, dI/dt=100A/ s 16.8 22 ns Body Diode Reverse Recovery Charge Q rr IF=-2.6A, dI/dt=100A/ s 10 nC Maximum Body-Diode Continuous Current I S -2 A VegatloVdrawroFedoiD SD IS=-1A,VGS V1-28.0-V0= * Repetitive rating, pulse width limited by junction temperature. VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3 rDS(ON)Static Drain-Source On-Resistance IDSSZero Gate Voltage Drain Current Qg A m VGS=0V, VDS=-15V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-2.6A 6-'6 Marking Marking A9*