2SJ3021-3 KEXIN
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www.kexin.com.cn 1 MOSFET P-Channel EnhancementMOSFET Ƶ Features ƽ VDS (V)=-30V ƽ ID =-4.2 A (VGS =-10V) ƽ RDS(ON) ˘ 50m¡ (VGS =-10V) ƽ RDS(ON) ˘ 65m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 120m¡ (VGS =-2.5V) 1. Gate 2. Source 3. Drain G D S Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol Rating Unit Drain-Source Voltage V DS -30 Gate-Source Voltage V GS ±12 Continuous Drain Current Ta = 25 ć -4.2 Ta = 70ć -3.5 Pulsed Drain Current I DM -30 Power Dissipation Ta = 25 ć 1.4 Ta = 70ć 1 Thermal Resistance.Junction- to-Ambient tİ 10s 90 Thermal Resistance.Junction- to-Ambient 125 Thermal Resistance.Junction- to-Case R thJC 60 Junction Temperature T J 150 Junction and Storage Temperature Range T stg -55 to 150 RthJA ID PD W V ć/W A ć 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 Unit: mmSOT-23-3 1.6 0.4 0.15+0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 2SJ3021
www.kexin.com.cn2 MOSFET P-Channel Enhancement MOSFET Ŷ Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V DSS ID=-250ȝ A, VGS=0V -30 V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55ć -5 Gate-Body leakage current I GSS VDS=0V, VGS=± 12V ± 100 nA Gate Threshold Voltage V GS(th) VDS=VGS ID=-250ȝ A -0.4 -1.3 V VGS=-10V, ID=-4.2A 50 VGS=-10V, ID=-4.2A T J=125ć 75 VGS=-4.5V, ID=-4A 65 VGS=-2.5V, ID=-1A 120 On state drain current I D(ON) VGS=-4.5V, VDS=-5V -25 A Forward Transconductance g FS VDS=-5V, ID=-5A 7 11 S Input Capacitance C iss 954 Output Capacitance C oss 115 Reverse Transfer Capacitance C rss 77 Gate resistance R g VGS=0V, VDS=0V, f=1MHz 6 ȍ Total Gate Charge Q g 9.4 Gate Source Charge Q gs 2 Gate Drain Charge Q gd 3 Turn-On DelayTime t d(on) 6.3 Turn-On Rise Time t r 3.2 Turn-Off DelayTime t d(off) 38.3 Turn-Off Fall Time t f 12 Body Diode Reverse Recovery Time t rr IF=-4A, dI/dt=100A/ȝ s 20.2 Body Diode Reverse Recovery Charge Q rr IF=5A, dI/dt=100A/ȝ s 11.2 nC Maximum Body-Diode Continuous Current I S -2.2 A Diode Forward Voltage V SD IS=-1A,VGS=0V -1 V pF nC ns Zero Gate Voltage Drain Current I DSS ȝ A mȍ VGS=-10V, VDS=-15V, RL=3.6ȍ ,RGEN=6ȍ RDS(On)Static Drain-Source On-Resistance VGS=0V, VDS=-15V, f=1MHz VGS=-4.5V, VDS=-15V, ID=-4A Ŷ Marking Marking A1* 2SJ3021