2SJ302-ZJ KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
www.kexin.com.cn 1 MOSFET P-Channel MOSFET 2SJ302-ZJ ■ Features
- VDS (V) =-60V
- ID =-16 A
- RDS(ON) ＜ 100mΩ (VGS =-10V)
- RDS(ON) ＜ 240mΩ (VGS =-4V) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16 Pulsed Drain Current (Note.1) IDM -64 Power Dissipation Tc = 25℃ PD 75 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V A Note.1: PW ≤ 10us,Duty Cycle ≤ 1%
www.kexin.com.cn2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=±16V ±10 uA Gate Cut off Voltage VGS(off) VDS=-10V,ID=-1mA -1 -2 V VGS=-10V, ID=-8A 100 VGS=-4V, ID=-6A 240 Forward Transconductance gFS VDS=-10V, ID=-8A 5 S Input Capacitance Ciss 1200 Output Capacitance Coss 670 Reverse Transfer Capacitance Crss 290 Total Gate Charge Qg 42 Gate Source Charge Qgs 3 Gate Drain Charge Qgd 17 Turn-On DelayTime td(on) 30 Turn-On Rise Time tr 170 Turn-Off DelayTime td(off) 150 Turn-Off Fall Time tf 130 Body Diode Reverse Recovery Time trr IF=-16A, VGS=0, dI/dt=100A/μs 110 Body Diode Reverse Recovery Charge Qrr 220 nC Diode Forward Voltage VSD IF=-16A,VGS=0V -1 V nC ns pF Static Drain-Source On-Resistance RDS(On) mΩ VGS(on)=-10V, VDS=-30V, ID=-8A, RL=3.75Ω,RGEN=10Ω VGS=0V, VDS=-10V, f=1MHz VGS=-10V, VDS=-48V, ID=-16A ■ Typical Characterisitics P-Channel MOSFET 2SJ302-ZJ
www.kexin.com.cn 3 MOSFET ■ Typical Characterisitics P-Channel MOSFET 2SJ302-ZJ
www.kexin.com.cn4 MOSF ET ■ Typical Characterisitics P-Channel MOSFET 2SJ302-ZJ
www.kexin.com.cn 5 MOSFET ■ Typical Characterisitics P-Channel MOSFET 2SJ302-ZJ