2SJ3001DS KEXIN

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www.kexin.com.cn 1 MOSFET P-Channel Enhancement MOSFET 2SJ3001DS Ƶ Features ƽ VDS (V) =-20V ƽ RDS(ON) ˘ 100m¡ (VGS =-4.5V) ƽ RDS(ON) ˘ 150m¡ (VGS =-2.5V) Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage V DS Gate-Source Voltage V GS Continuous Drain Current Ta=25ć -2.4 -2.2 Ta=70ć -1.9 -1.8 Pulsed Drain Current *2 I DM Power Dissipation *1 Ta=25 ć 0.9 0.7 W Ta=70ć 0.57 0.45 Thermal Resistance.Junction- to-Ambient *1 120 145 *3 140 175 Junction Temperature T J Storage Temperature Range T stg PD 150 -55 to 150 RthJA ID -20 -10 V A ć ć/W *1 Surface Mounted on FR4 Board, t İ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. G S D 1. Gate 2. Source 3. Drain 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 Unit: mmSOT-23-3 1.6 0.4 0.15+0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 (TJ =150ć)

www.kexin.com.cn2 MOSFET P-Channel Enhancement MOSFET 2SJ3001DS Ƶ Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V DSS ID=-250­A, VGS=0V -20 V VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55ć -10 Gate-Body leakage current I GSS VDS=0V, VGS=±8V ±100 nA Gate Threshold Voltage V GS(th) VDS=VGS ID=-250­A -0.4 -0.955V VGS=-4.5V, ID=-2.8A 80 100 VGS=-2.5V, ID=-2.0A 110 150 VGS=-4.5V, VDS İ -5V -6 A VGS=-2.5V, VDS İ -5V -3 Forward Transconductance *1 g FS VDS=-5V, ID=-2.8A 6.5 S Input Capacitance *2 C iss 375 Output Capacitance *2 C oss 95 Reverse Transfer Capacitance *2 C rss 65 Total Gate Charge *2 Q g 4.5 10 Gate Source Charge *2 Q gs 0.7 Gate Drain Charge *2 Q gd 1.1 Turn-On DelayTime *3 t d(on) 20 30 Turn-On Rise Time *3 t r 40 60 Turn-Off DelayTime *3 t d(off) 30 45 Turn-Off Fall Time *3 t f 20 30 5 sec -0.72 Steady State -0.6 Diode Forward Voltage VSD IS=-0.75A,VGS=0V -0.8 -1.2 V A VGS=-4.5 V, VDS=-6V, RL=6¡,RGEN=6¡ ID=-1.0A Maximum Body-Diode Continuous Current I S pF nC On state drain current *1 I D(ON) ns Zero Gate Voltage Drain Current I DSS ­A m¡RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=-6V, f=1MHz VGS=-4.5V, VDS=-6V, ID=-2.8A *1 Pulse test: PW İ 300 us duty cycleİ 2%. *2 For DESIGN AID ONLY, not subject to production testing. *3 Switching time is essentially independent of operating temperature. Ƶ Marking Marking A1*

www.kexin.com.cn 3 MOSFET P-Channel Enhancement MOSFET Ƶ Typical Characterisitics 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 012345 200 400 600 800 048 1 2 1 6 2 0 0.0 0.1 0.2 0.3 0.4 0.5 02468 1 0 012345 On-Resistance vs. Drain Current scitsiretcarahCrefsnarTscitsiretcarahCtuptuO VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = -55 C 125 C VGS =5t h r u2 . 5V 1.5 V Gate Charge - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) V GS Crss Coss Ciss VDS =1 0V ID =2 . 8A - On-Resistance (rDS(on) ) I D - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature VGS =4 . 5V ID =2 . 8A TJ - Junction Temperature ( C) (Normalized) - On-Resistance (rDS(on) ) VGS =2 . 5V VGS =4 . 5V 25 C b 2SJ3001DS

www.kexin.com.cn4 MOSFET P-Channel Enhancement MOSFET Ƶ Typical Characterisitics 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012345 Variance (V)V GS(th) - Source Current (A)I S -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 TJ =1 5 0C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Square Wave Pulse Duration (sec) - On-Resistance (rDS(on) ) VSD V)V(egatloVniarD-ot-ecruoS- GS - Gate-to-Source Voltage (V) TJ - Temperature ( )ces(emiT)C Power (W) ID =2 . 8A ID = 250 A 0.1 TJ =2 5 C TA =2 5C Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 0.1 1 10 100 0.01 - Drain Current (A)ID 0.1 10 s 100 s 1m s 10 ms 100 ms TA =2 5 C Single Pulse 0.01 0.1 1 10 100 1000 dc, 100 s, 10 s, 1 s 2SJ3001DS

www.kexin.com.cn 5 MOSFET P-Channel Enhancement MOSFET Ƶ Typical Characterisitics Normalized T hermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 0.1 0.01 10-4 10-3 10-2 10-1 006011 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA= 62.5 C/W 3. TJM -T A=P DM ZthJA(t) Notes: 4. Surface Mounted PDM 100 2SJ3001DS